Author: Siu Sing Chan
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 172
Book Description
As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide
Author: Siu Sing Chan
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 172
Book Description
As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 172
Book Description
As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Modification of Electrical Properties of Sulphur-implanted GaAs by the Addition of Gallium
Author: Parveen Jahan Ali
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 104
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 104
Book Description
Scientific and Technical Aerospace Reports
Nuclear Science Abstracts
Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide
Author: James Douglas Sansbury
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
Book Description
Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide
Author: Alvin Bau Yuen Young
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 116
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 116
Book Description
Analytical Study of Zinc Diffusion in Gallium Arsenide and the Electrical Properties of the Resulting Diffused Layers
Author: Stanford University. Stanford Electronics Laboratories
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 82
Book Description
This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 82
Book Description
This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.
Properties of Gallium Arsenide
Author:
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
Book Description
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
Book Description
The Effects of Ion-implanted Gallium, Arsenic, and Phosphorus on the Diffusion of Ion-implanted Zinc in Gallium Arsenide Phosphide
Author: Edward Bryant Stoneham
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 464
Book Description
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 464
Book Description
Rapid Thermal Processing of Semiconductors
Author: Victor E. Borisenko
Publisher: Springer Science & Business Media
ISBN: 1489918043
Category : Technology & Engineering
Languages : en
Pages : 374
Book Description
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Publisher: Springer Science & Business Media
ISBN: 1489918043
Category : Technology & Engineering
Languages : en
Pages : 374
Book Description
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.