Dielectric and Optical Properties of Sputtered Thin Films PDF Download
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Author: A. R Tanguay (Jr) Publisher: ISBN: Category : Languages : en Pages : 135
Book Description
Of critical importance to the eventual performance of numerous coherent optical image processors and highly parallel computers is the development of a high speed, recyclable, linear, high resolution, selectively erasable image storage transducer operable in nearly real time. Applications for such a transducer abound, including incoherent-to-coherent conversion, pattern recognition and image feature extraction, level slicing, edge enhancement, low light level image integration, scratch pad memory, and page composition for data entry in holographic memory systems. In response to this need, a wide variety of candidate devices have been proposed in the past ten years, based on photochromic, liquid crystal, photorefractive, magnetooptic, electrooptic, deformable membrane, thermoplastic, photodichroic, and ambidextrous effects in numerous configurations. The device category comprised of Electrooptic Spatial Light Modulators contains a number of leading candidates, due to a combination of wide dynamic range, high sensitivity, intermediate storage time, relative simplicity of construction and operation, and long term durability. This category includes the Pockels Readout Optical Modulator or PROM, a Soviet modification of th PROM called the PRIZ, the Microchannel Spatial Light Modulator, the TITUS and photo-TITUS, and the Photorefractive Incoherent-to-Coherent Optical Converter.
Author: O. S. Heavens Publisher: Courier Corporation ISBN: 9780486669243 Category : Science Languages : en Pages : 290
Book Description
Authoritative reference treats the formation, structure, optical properties, and uses of thin solid films, emphasizing causes of their unusual qualities. 162 figures. 19 tables. 1955 edition.
Author: Rajendra S. Khandelwal Publisher: ISBN: Category : Sputtering (Physics) Languages : en Pages : 246
Book Description
Low temperature preparation of thin amorphous Silicon Nitride and Germanium Films by direct RF sputter deposition was investigated. Influence of various sputtering parameters on film properties was studied. Infrared transmission spectrophotometry was used to evaluate optical properties of the films whereas electrical characteristics of the films were determined from current-voltage measurements of MIS structures. For Silicon Nitride films it was observed that the stoichiometry, as indicated by the IR transmission, dielectric constant and current density versus square root of electric field measurements, was a strong function of the sputtering gas composition and particularly the Ar/N ratio in the sputtering gas. It was established from the current-voltage relationship that the dominant conduction mechanism in these films is of PooleFrenkel type. The current-voltage characteristics of the MIS devices were observed to be independent of the electrode material, device area and the film thickness. It is concluded that the insulating films thus deposited were comparable to those deposited using any other deposition method and is anticipated that due to the low deposition temperatures, sputtering may emerge as a highly potential process for optoelectronic device passivation.
Author: Maurice H. Francombe Publisher: Elsevier ISBN: 1483144933 Category : Science Languages : en Pages : 385
Book Description
Physics of Thin Films: Advances in Research and Development, Volume 6 reviews the rapid progress that has been made in research and development concerning the physics of thin films, with emphasis on metallic films. Topics covered include anodic oxide films, thin metal films and wires, and multilayer magnetic films. This volume is comprised of five chapters and begins with a discussion on the dielectric properties and the technique of plasma anodization which are relevant to the applications of anodic oxide films in electronic devices. Conduction, polarization, and dielectric breakdown effects are also considered. The next chapter examines studies on size-dependent electrical conduction in thin metal films and wires, paying particular attention to both classical and quantum size effects and some of the anisotropic characteristics of epitaxial metal films. The reader is then introduced to the optical properties of metal films and interactions in multilayer magnetic films. This text concludes with a chapter that looks at diffusion in metallic films and presents experimental results for phase-forming systems, miscible systems, and lateral diffusion. This monograph will be of value to students and practitioners of physics, especially those interested in thin films.
Author: Robert B. Owen Publisher: ISBN: Category : Ceramic metals Languages : en Pages : 116
Book Description
A transmission electron microscopy study involving direct and replicating techniques is directed to a definition of the microstructure of radio frequency-sputtered, thin lead-dielectric cermet films. Once defined, this microstructure is used to obtain theoretical film refractive indices. The Maxwell Garnett theory provides a basis for the theoretical results. Measurements of film transmission and reflectivity are used to obtain rough experimental values for film refractive indices by the Tekucheva method. More exact values are obtained via ellipsometry. The rough Tekucheva values are used to determine the range over which computer calculations interpreting the ellipsometric results must be made. This technique yields accurate values for the film refractive indices. The films are radio frequency-sputtered from lead glass targets with varying amounts of lead attached to their faces. Three different targets are used, resulting in three sets of films, each containing a different percentage of lead. The lead content of the films is measured by microprobe analysis as well as visual inspection of micrographs. The lower content lead films are seen to consist of tiny balls of lead embedded in the dielectric, as are the intermediate lead content films; but the higher lead content films form metallic with the predictions of the Maxwell Garnett theory; but the higher lead content films, whose structure fails to conform to the Maxwell Garnett configuration, have indices whose values diverge from the Maxwell Garnett predictions. It is thus shown that the theory of Maxwell Garnett is valid for thin cermet films whose structure consists of tiny metal balls embedded in a dielectric medium.