Author: Yi MaPublisher:
ISBN:
Category :
Languages : en
Pages : 278
Book Description
Device Quality Ultra Thin Dielectrics Deposited by Remote Plasma Enhanced Chemical Vapor Deposition
Author: Yi MaDevice Quality Remote Plasma-enhanced Chemical Vapor Deposited (RPECVD) Gate Dielectrics for MOS Applications
Author: Christopher Gerald ParkerPublisher:
ISBN:
Category : Dielectric devices
Languages : en
Pages : 282
Book Description
Development of Plasma Enhanced Chemical Vapor Deposition (PECVD) Gate Dielectrics for Thin-film Transistor Applications
Author: Germain L. FengerPublisher:
ISBN:
Category : Thin film transistors
Languages : en
Pages : 178
Book Description
"This study investigated a variety of electrically insulating materials for potential use as a gate dielectric in thin-film transistor applications. The materials that were investigated include silicon dioxide and oxynitride films deposited using PECVD and LPCVD techniques. Silicon source materials included tetraethylorthosilicate (TEOS) and silane (SiH4). Oxygen sources included diatomic oxygen (O2) and nitrous oxide (N2O). The optical, electrical, and material properties of the dielectrics were analyzed using Variable Angle Spectroscopic Ellipsometry (VASE), Fourier Transform Infrared Spectroscopy (FTIR), Capacitance-Voltage (C-V) analysis and current-voltage (I-V) analysis. Transistors were also fabricated at low temperatures with different gate dielectrics to investigate the impact on device performance. While a deposited gate dielectric is intrinsically inferior to a thermally grown SiO2 layer, an objective of this study was to create a high quality gate dielectric with low levels of bulk and interface charge (Qit & Qot~1x1010 cm2); this was achieved."--Abstract.
Effects of Deposition Parameters on Thin Film Properties of Si-based Electronic Materials Deposited by Remote Plasma-enhanced Chemical Vapor Deposition
Author: Jeremy Alfred TheilLow Dielectric Constant SiCOH Thin Films Deposited by Plasma-enhanced Chemical Vapor Deposition and Their Etching Characteristics Using Fluorocarbon-based Plasma
Author: Jacob ComeauxPublisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 0
Book Description
Remote Plasma Enhanced Chemical Vapor Deposition of Silicon Based Dielectrics
Author: Aditi BanerjeeThe Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000
Author: Hisham Z. MassoudPublisher:
ISBN:
Category : Nature
Languages : en
Pages : 562
Book Description
Plasma Enhanced Chemical Vapor Deposition of Titanium Oxide Thin Films for Dielectric Applicaitons
Author: Wenli YangPublisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 298
Book Description
Handbook of Thin Film Deposition
Author: Krishna SeshanPublisher: William Andrew
ISBN: 1437778747
Category : Technology & Engineering
Languages : en
Pages : 411
Book Description
The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry
Author: David Vincent Tsu