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Rapid Thermal and Integrated Processing

Rapid Thermal and Integrated Processing PDF Author:
Publisher:
ISBN:
Category : Rapid thermal processing
Languages : en
Pages : 914

Book Description


Rapid Thermal and Integrated Processing

Rapid Thermal and Integrated Processing PDF Author:
Publisher:
ISBN:
Category : Rapid thermal processing
Languages : en
Pages : 914

Book Description


Selected Topics in Group IV and II-VI Semiconductors

Selected Topics in Group IV and II-VI Semiconductors PDF Author: E.H.C. Parker
Publisher: Newnes
ISBN: 0444596437
Category : Technology & Engineering
Languages : en
Pages : 465

Book Description
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

Rapid Thermal and Integrated Processing VII

Rapid Thermal and Integrated Processing VII PDF Author: Materials Research Society
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 432

Book Description


Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena

Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena PDF Author: Kompa, Günter
Publisher: kassel university press GmbH
ISBN: 3862195414
Category : Compound semiconductors
Languages : en
Pages : 762

Book Description
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.

Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 854

Book Description


SiO2 and Its Interfaces: Volume 105

SiO2 and Its Interfaces: Volume 105 PDF Author: S. T. Pantelides
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 360

Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

American Doctoral Dissertations

American Doctoral Dissertations PDF Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 848

Book Description


IBM Journal of Research and Development

IBM Journal of Research and Development PDF Author:
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 854

Book Description


Abstracts

Abstracts PDF Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Materials science
Languages : en
Pages : 504

Book Description


Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304

Book Description