Author: Rickard LövblomPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Development of Sub-millimeter-wave InP/GaAsSb Double Heterojunction Bipolar Transistors
Author: Rickard LövblomDevelopment of High-speed, Type-II, GaAsSb/InP, Double-heterojunction Bipolar Transistors
Author: Benjamin Chu-KungDevelopment and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors
Author: Maria AlexandrovaDevelopment of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits
Author: Wei QuanCharacterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors
Author: Nick Gengming TaoPublisher:
ISBN:
Category : Bipolar transisitors
Languages : en
Pages : 0
Book Description
In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.
Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits
Author: Urs HammerPublisher:
ISBN: 9783866283015
Category : Bipolar transistors
Languages : en
Pages : 265
Book Description
Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency
Author: InP/GaAsSb/InP Double Heterojunction Bipolar Transistors
Author: C. R. BolgnesiPublisher:
ISBN:
Category :
Languages : en
Pages : 9
Book Description
InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are some of the fastest bipolar transistors ever fabricated, with current gain cutoff and maximum oscillation frequencies simultaneously exceeding 300 GHz while maintaining breakdown voltages BV(sub ceo> 6V I. InP/GaAsSb/InP DHBTs are particularly appealing because excellent device figures of merit are achievable with relatively simple structures involving abrupt junctions and uniform doping levels and compositions. This is a tremendous manufacturability advantage and the reason why some organizations have moved aggressively toward GaAsSb DHBT production despite a relative scarcity of information on the physical properties of the GaAsSb alloy in comparison to GalnAs. The present paper reviews some of the key concepts associated with the use of GaAsSb base layers, and discusses the physical operation InP/GaAsSb/InP DHBTs. In particular, we will describe the implications of the staggered band lineup at the E/B and B/C heterojunctions for charge storage in the devices, and show that InP/GaAsSb/InP DHBTs offer inherent advantages from that point of view. We will also show that GaAsSb based DHBTs can be expected to display better scalability than GainAs-based devices because of their inherently superior base Ohmic contacts.
Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors
Author: Martin W. DvorakPublisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 356
Book Description
Author: