Author: Defense Documentation Center (U.S.)Publisher:
ISBN:
Category : Science
Languages : en
Pages : 784
Book Description
Technical Abstract Bulletin
Author: Defense Documentation Center (U.S.)Publisher:
ISBN:
Category : Science
Languages : en
Pages : 784
Book Description
Abstracts of Active Contracts
Author: Publisher:
ISBN:
Category : Defense contracts
Languages : en
Pages : 366
Book Description
Abstracts of Air Force Materials Laboratory contracts that were active on 15 August 1966 are reported. The abstracts are ordered by Divisions of laboratory and are indexed by contract number. Each abstract entry provides the title of the contract, contractor, duration, project engineer, objective and progress.
Silicon Carbide — 1968
Author: H. K. HenischPublisher: Elsevier
ISBN: 1483152618
Category : Science
Languages : en
Pages : 379
Book Description
Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Abstracts of Active Contracts
Author: Air Force Materials Laboratory (U.S.).Publisher:
ISBN:
Category : Defense contracts
Languages : en
Pages : 288
Book Description
Scientific and Technical Aerospace Reports
Author: NASA Patent Abstracts Bibliography
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information ProgramPublisher:
ISBN:
Category : Astronautics
Languages : en
Pages : 624
Book Description
Handbook of Electronic Materials
Author: M. NeubergerPublisher: Springer Science & Business Media
ISBN: 1468479172
Category : Technology & Engineering
Languages : en
Pages : 73
Book Description
This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F33615-70-C-1348. The work was administered under the direc tion of the Air Force Materials Laboratory, Air Force Systems Command, Wright Patterson Air Force Base, Ohio, with Mr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is adesignated Information Analysis Center of the Department of Defense, authorized to provide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experimental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information gene rally regarded as being in the area of devices and/or circuitry is excluded. Grateful acknowledgement is made for the review and comments by Dr. Victor Rehn of the U. S. Naval Ordnance Test Station at China Lake, California, as weIl as for review by staff members of the National Bureau of Standards, National Standard Data Reference System. v CONTENTS Introduction . •. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Composite Data Table. . . . . . . . . . . . . . . . . . . . . . . . . 5 Diamond. . . . . . . . •. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Bibliography . . . . . . •. . . . . . . . . . . . . . . . . . . . . . . 11 Germanium . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Bibliography . . . . . . . . •. . . . . . . . . . . . . . . . . . . . . 28 Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Government Reports Announcements & Index
Author: Fundamentals of Silicon Carbide Technology
Author: Tsunenobu KimotoPublisher: John Wiley & Sons
ISBN: 1118313550
Category : Technology & Engineering
Languages : en
Pages : 565
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: