Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
Development of High Efficiency GaAs Polycrystal Solar Cells
Author: Development of High Efficiency GaAs Polycrystal Solar Cells. Quarterly Technical and Topical Report No. 2, 24 April Oct 1978-23 July 1978
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The objectives of this program are to develop a thin film polycrystal GaAs solar cell technology with the potential of yielding cells with 12 to 15% efficiency and to develop thin film growth techniques which are compatible with the low cost production goal of $100 to 300/kW peak. Techniques conceived and initiated during the first quarter have seen initial application for measurements and fabrication of solar cells. The scanning Auger potential profiling and cathode-conductivity measurements and scanning laser system are beginning to yield useful results. Transient capacitance measurement of minority carrier lifetimes and Schottky barrier comparisons of LPE and MBE polycrystalline GaAs are described. Theoretical investigations of GaAs dislocations and polycrystalline solar cell modeling have begun. Oxidation of GaAs for MIS cell fabrication is described, and promising values reported for initial MIS single crystal solar cell performance.
Development of High Efficiency GaAs Polycrystal Solar Cells
Author: Development of High Efficiency Solar Cells
Author: D. L. MillerPublisher:
ISBN:
Category : Silicon
Languages : en
Pages : 188
Book Description
High-efficiency GaAs Solar Cells on Polycrystalline Ge Substrates
Author: Rama VenkatasubramanianPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 37
Book Description
This report describes work performed by Research Triangle Institute (RTI) under this subcontract. The objective of this program was to further improve on the performance of GaAs solar cells on poly-Ge substrates. Material and device issues related to the development of GaAs solar cells on poly-Ge substrates were addressed. Key material physics issues include the use of Group-VI dopant, specifically Se, to passivate the grain boundaries in the n-GaAs base to achieve large Jsc values. Device-structure optimization studies led RTI researchers to achieve an AM1.5 efficiency of ~20% for a 4-cm2 GaAs cell and an efficiency of ~21% for a 0.25-cm2 cell on sub-mm grain-size poly-Ge substrates. Key device physics issues include understanding of the dark-current reduction mechanism with an undoped spacer at the p+-n depletion layer. The successful demonstration of high-efficiency GaAs cells on sub-mm grain-size poly-Ge substrates motivated researchers to develop high-quality GaAs materials on lower-cost substrates such as glass and moly foils. They achieved a best minority-carrier lifetime of 0.41 ns in an n-GaAs thin-film on moly. The role of Group VI dopant in the possible passsivation of grain boundaries has been studied in GaAs films on moly foils.
Development of Polycrystal GaAs Solar Cells
Author: Rockwell International. Electronics Research CenterPublisher:
ISBN:
Category : Gallium arsenide solar cells
Languages : en
Pages : 82
Book Description
Development of Polycrystal GaAs Solar Cells
Author: Rockwell International. Electronics Research CenterPublisher:
ISBN:
Category : Gallium arsenide solar cells
Languages : en
Pages : 54
Book Description
Solar Energy Update
Author: Development of High Efficiency Cascade Solar Cells
Author: Research Triangle InstitutePublisher:
ISBN:
Category : Solar cells
Languages : en
Pages : 26
Book Description
High efficiency thin-film GaAs solar cells
Author: Jet Propulsion Laboratory (U.S.)Publisher:
ISBN:
Category :
Languages : en
Pages : 72
Book Description