Determination of Deep Impurities in Silicon and Germanium by Infrared Photoconductivity (Classic Reprint) PDF Download
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Author: W. Robert Thurber Publisher: Forgotten Books ISBN: 9781391799810 Category : Science Languages : en Pages : 22
Book Description
Excerpt from Determination of Deep Impurities in Silicon and Germanium by Infrared Photoconductivity The most direct method for determining the Optical absorption cross section of a particular impurity is measurement of the transmission of a specimen containing a known concentration of the impurity. Emmons [2] gives a discussion of the procedure with specific application to gallium in silicon at 20 K. Data are usually obtained as a function of wave length and at the temperature used for the photoconductivity measurements as the cross sections are generally wavelength and temperature dependent. About the Publisher Forgotten Books publishes hundreds of thousands of rare and classic books. Find more at www.forgottenbooks.com This book is a reproduction of an important historical work. Forgotten Books uses state-of-the-art technology to digitally reconstruct the work, preserving the original format whilst repairing imperfections present in the aged copy. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in our edition. We do, however, repair the vast majority of imperfections successfully; any imperfections that remain are intentionally left to preserve the state of such historical works.
Author: W. Robert Thurber Publisher: Forgotten Books ISBN: 9781391799810 Category : Science Languages : en Pages : 22
Book Description
Excerpt from Determination of Deep Impurities in Silicon and Germanium by Infrared Photoconductivity The most direct method for determining the Optical absorption cross section of a particular impurity is measurement of the transmission of a specimen containing a known concentration of the impurity. Emmons [2] gives a discussion of the procedure with specific application to gallium in silicon at 20 K. Data are usually obtained as a function of wave length and at the temperature used for the photoconductivity measurements as the cross sections are generally wavelength and temperature dependent. About the Publisher Forgotten Books publishes hundreds of thousands of rare and classic books. Find more at www.forgottenbooks.com This book is a reproduction of an important historical work. Forgotten Books uses state-of-the-art technology to digitally reconstruct the work, preserving the original format whilst repairing imperfections present in the aged copy. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in our edition. We do, however, repair the vast majority of imperfections successfully; any imperfections that remain are intentionally left to preserve the state of such historical works.
Author: W. Robert Thurber Publisher: Forgotten Books ISBN: 9780364943472 Category : Science Languages : en Pages : 34
Book Description
Excerpt from Determination of Oxygen Concentration in Silicon and Germanium by Infrared Absorption The commercial instrument is identified in this paper in order to specify adequately the experimental procedure. In no case does such identification imply recommendation or endorsement by the National Bureau of Standards, nor does it imply that the equipment identified is necessarily the best available for the purpose. About the Publisher Forgotten Books publishes hundreds of thousands of rare and classic books. Find more at www.forgottenbooks.com This book is a reproduction of an important historical work. Forgotten Books uses state-of-the-art technology to digitally reconstruct the work, preserving the original format whilst repairing imperfections present in the aged copy. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in our edition. We do, however, repair the vast majority of imperfections successfully; any imperfections that remain are intentionally left to preserve the state of such historical works.
Author: W. Robert Thurber Publisher: ISBN: Category : Gases Languages : en Pages : 28
Book Description
Infrared absorption measurements were made at room temperature, 80 K, and 20 K to determine the absorption coefficient of oxygen in silicon and germanium single crystals. A study was done to compare the results of four experimental methods, which involved both absolute and difference procedures.Sources of error were identified, including that due to calculating the absorption coefficient with an approximate equation which neglects multiple internal reflections.Measurements made on the same specimen at several temperatures give additional data on the relation of oxygen concentration to absorption coefficient at low temperatures.(Author).
Author: Dieter K. Schroder Publisher: John Wiley & Sons ISBN: 0471739065 Category : Technology & Engineering Languages : en Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Lawrence Charles Kravitz Publisher: ISBN: Category : Languages : en Pages : 1
Book Description
This report describes combined infra-red absorption and electron spin resonance experiments on deep-lying impurities in silicon and germanium. By monitoring the electron spin resonance signal of an impurity while simultaneously illuminating the sample with monochromatic infra-red radiation, ionization and trapping processes which change the impurity population are detected. The results of this measurement are then compared with photoconductive response and Hall effect data on the same crystal. Experimental results on iron, chromium and sulfur impurities in silicon and nickel in germanium are presented and discussed in terms of the ionization energies of the impurities and the photoexcitation processes. (Author).
Author: W. Robert Thurber
Author: W. Robert Thurber
Author: W. Robert Thurber
Author: 
Author: W. Robert Thurber
Author: W. Robert Thurber
Author: Alvin H. Sher
Author: W. Robert Thurber
Author: Bill F. Mitchell
Author: Dieter K. Schroder
Author: Lawrence Charles Kravitz