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Author: Syed Mohiul Alam Publisher: ISBN: Category : Languages : en Pages : 204
Book Description
Total on-chip interconnect length has been increasing exponentially with technology scaling. Consequently, interconnect-driven design is an emerging trend in state-of-the- art integrated circuits. Cu-based interconnect technology is expected to meet some of the challenges of technology scaling. However, Cu interconnects still pose a reliability concern due to electromigration-induced failure over time. The major contribution of this thesis is a new reliability CAD tool, SysRel, for thermal-aware reliability analysis with either Al or Cu metallization technology in conventional and three-dimensional integrated circuits. An interconnect tree is the fundamental reliability unit for circuit-level reliability assessments for metallization schemes with fully-blocking boundaries at the vias. When vias do not block electromigration as indicated in some Cu experimental studies, multiple trees linked by a non-blocking via are merged to create a single fundamental reliability unit. SysRel utilizes a tree-based hierarchical analysis that sufficiently captures the differences between electromigration behavior in Al and Cu metallizations. The hierarchical flow first identifies electromigration-critical nets or "mortal" trees, applies a default model to estimate the lifetimes of individual trees, and then produces a set of full-chip reliability metrics based on stochastic analysis using the desired lifetime of the circuit. We have exercised SysRel to compare layout-specific reliability with Cu and Al metallizations in various circuits and circuit elements. Significantly improved test-level reliability in Cu is required to achieve equivalent circuit-level reliability. The required improvement will increase as low-k dielectric materials are introduced and liner thicknesses are reduced in future.
Author: Syed Mohiul Alam Publisher: ISBN: Category : Languages : en Pages : 204
Book Description
Total on-chip interconnect length has been increasing exponentially with technology scaling. Consequently, interconnect-driven design is an emerging trend in state-of-the- art integrated circuits. Cu-based interconnect technology is expected to meet some of the challenges of technology scaling. However, Cu interconnects still pose a reliability concern due to electromigration-induced failure over time. The major contribution of this thesis is a new reliability CAD tool, SysRel, for thermal-aware reliability analysis with either Al or Cu metallization technology in conventional and three-dimensional integrated circuits. An interconnect tree is the fundamental reliability unit for circuit-level reliability assessments for metallization schemes with fully-blocking boundaries at the vias. When vias do not block electromigration as indicated in some Cu experimental studies, multiple trees linked by a non-blocking via are merged to create a single fundamental reliability unit. SysRel utilizes a tree-based hierarchical analysis that sufficiently captures the differences between electromigration behavior in Al and Cu metallizations. The hierarchical flow first identifies electromigration-critical nets or "mortal" trees, applies a default model to estimate the lifetimes of individual trees, and then produces a set of full-chip reliability metrics based on stochastic analysis using the desired lifetime of the circuit. We have exercised SysRel to compare layout-specific reliability with Cu and Al metallizations in various circuits and circuit elements. Significantly improved test-level reliability in Cu is required to achieve equivalent circuit-level reliability. The required improvement will increase as low-k dielectric materials are introduced and liner thicknesses are reduced in future.
Author: Palkesh Jain Publisher: ISBN: Category : Languages : ca Pages : 125
Book Description
The phenomenal progress of computing devices has been largely made possible by the sustained efforts of semiconductor industry in innovating techniques for extremely large-scale integration. Indeed, gigantically integrated circuits today contain multi-billion interconnects which enable the transistors to talk to each other -all in a space of few mm2. Such aggressively downscaled components (transistors and interconnects) silently suffer from increasing electric fields and impurities/defects during manufacturing. Compounded by the Gigahertz switching, the challenges of reliability and design integrity remains very much alive for chip designers, with Electro migration (EM) being the foremost interconnect reliability challenge. Traditionally, EM containment revolves around EM guidelines, generated at single-component level, whose non-compliance means that the component fails. Failure usually refers to deformation due to EM -manifested in form of resistance increase, which is unacceptable from circuit performance point of view. Subsequent aspects deal with correct-by-construct design of the chip followed by the signoff-verification of EM reliability. Interestingly, chip designs today have reached a dilemma point of reduced margin between the actual and reliably allowed current densities, versus, comparatively scarce system-failures. Consequently, this research is focused on improved algorithms and methodologies for interconnect reliability analysis enabling accurate and design-specific interpretation of EM events. In the first part, we present a new methodology for logic-IP (cell) internal EM verification: an inadequately attended area in the literature. Our SPICE-correlated model helps in evaluating the cell lifetime under any arbitrary reliability speciation, without generating additional data - unlike the traditional approaches. The model is apt for today's fab less eco-system, where there is a) increasing reuse of standard cells optimized for one market condition to another (e.g., wireless to automotive), as well as b) increasing 3rd party content on the chip requiring a rigorous sign-off. We present results from a 28nm production setup, demonstrating significant violations relaxation and flexibility to allow runtime level reliability retargeting. Subsequently, we focus on an important aspect of connecting the individual component-level failures to that of the system failure. We note that existing EM methodologies are based on serial reliability assumption, which deems the entire system to fail as soon as the first component in the system fails. With a highly redundant circuit topology, that of a clock grid, in perspective, we present algorithms for EM assessment, which allow us to incorporate and quantify the benefit from system redundancies. With the skew metric of clock-grid as a failure criterion, we demonstrate that unless such incorporations are done, chip lifetimes are underestimated by over 2x. This component-to-system reliability bridge is further extended through an extreme order statistics based approach, wherein, we demonstrate that system failures can be approximated by an asymptotic kth-component failure model, otherwise requiring costly Monte Carlo simulations. Using such approach, we can efficiently predict a system-criterion based time to failure within existing EDA frameworks. The last part of the research is related to incorporating the impact of global/local process variation on current densities as well as fundamental physical factors on EM. Through Hermite polynomial chaos based approach, we arrive at novel variations-aware current density models, which demonstrate significant margins (> 30 %) in EM lifetime when compared with the traditional worst case approach. The above research problems have been motivated by the decade-long work experience of the author dealing with reliability issues in industrial SoCs, first at Texas Instruments and later at Qualcomm.
Author: Jens Lienig Publisher: Springer ISBN: 3319735586 Category : Technology & Engineering Languages : en Pages : 171
Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Author: Chung-Kuan Cheng Publisher: Wiley-Interscience ISBN: Category : Computers Languages : en Pages : 288
Book Description
State-of-the-art methods and current perspectives on interconnect The irrepressible march toward smaller and faster integrated circuits has made interconnect a hot topic for semiconductor research. The effects of wire size, topology construction, and network design on system performance and reliability have all been thoroughly investigated in recent years. Interconnect Analysis and Synthesis provides CAD researchers and engineers with powerful, state-of-the-art tools for the analysis, design, and optimization of interconnect. It brings together a wealth of information previously scattered throughout the literature, explaining in depth available analysis techniques and presenting a range of CAD algorithms for synthesizing and optimizing interconnect. Along with examples and results from the semiconductor industry and 150 illustrations, this practical work features: Models for interconnect as well as devices and the impact of scaling trends Modern analysis techniques, from matrix reduction and moment matching to transmission-line analysis An overview of the effects of inductance on on-chip interconnect Flexible CAD algorithms that can be generalized for different needs, from buffer insertion to wire sizing to routing topology Emphasis on realistic problem formulations, addressing key design tradeoffs such as those between area and performance
Author: Mohsen Raji Publisher: Springer Nature ISBN: 3031153456 Category : Technology & Engineering Languages : en Pages : 113
Book Description
This book covers the state-of-the-art research in design of modern electronic systems used in safety-critical applications such as medical devices, aircraft flight control, and automotive systems. The authors discuss lifetime reliability of digital systems, as well as an overview of the latest research in the field of reliability-aware design of integrated circuits. They address modeling approaches and techniques for evaluation and improvement of lifetime reliability for nano-scale CMOS digital circuits, as well as design algorithms that are the cornerstone of Computer Aided Design (CAD) of reliable VLSI circuits. In addition to developing lifetime reliability analysis and techniques for clocked storage elements (such as flip-flops), the authors also describe analysis and improvement strategies targeting commercial digital circuits.
Author: Raimund Ubar Publisher: IGI Global ISBN: 1609602145 Category : Computers Languages : en Pages : 550
Book Description
"This book covers aspects of system design and efficient modelling, and also introduces various fault models and fault mechanisms associated with digital circuits integrated into System on Chip (SoC), Multi-Processor System-on Chip (MPSoC) or Network on Chip (NoC)"--
Author: Eugene R. Hnatek Publisher: CRC Press ISBN: 1482277719 Category : Technology & Engineering Languages : en Pages : 809
Book Description
Examines all important aspects of integrated circuit design, fabrication, assembly and test processes as they relate to quality and reliability. This second edition discusses in detail: the latest circuit design technology trends; the sources of error in wafer fabrication and assembly; avenues of contamination; new IC packaging methods; new in-line process monitors and test structures; and more.;This work should be useful to electrical and electronics, quality and reliability, and industrial engineers; computer scientists; integrated circuit manufacturers; and upper-level undergraduate, graduate and continuing-education students in these disciplines.
Author: Syed Mohiul Alam
Author: Syed Mohiul Alam
Author: Stefan Peter Hau-Riege
Author: Palkesh Jain
Author: Jens Lienig
Author: Chung-Kuan Cheng
Author: Mohsen Raji
Author: Syed Mohiul Alam
Author: Raimund Ubar
Author: Eugene R. Hnatek
Author: NS. Nagaraj