Design Status of a Separated-sector Cyclotron Booster Accelerator for the Holifield Heavy Ion Research Facility PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A separated-sector cyclotron booster accelerator is being designed for the Holifield Heavy Ion Research Facility as a Phase II project to be started in 1978. Phase I of the HHIRF, now under construction, includes a 25 MV tandem electrostatic accelerator, a beam transport and injection system to enable use of the Oak Ridge Isochronous Cyclotron as an energy booster for tandem beams, and some additional experiment areas and associated beam transport systems. The Phase I facility using the ORIC-25 MV tandem combination will provide energies up to about 25 MeV/amu for light ions such as oxygen and more than 5 MeV/amu up to the region of mass 160. The new Phase II separated-sector cyclotron will provide energies up to 100 MeV/amu for light ions and up to 12 MeV/amu for the heaviest ions such as uranium.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A separated-sector cyclotron booster accelerator is being designed for the Holifield Heavy Ion Research Facility as a Phase II project to be started in 1978. Phase I of the HHIRF, now under construction, includes a 25 MV tandem electrostatic accelerator, a beam transport and injection system to enable use of the Oak Ridge Isochronous Cyclotron as an energy booster for tandem beams, and some additional experiment areas and associated beam transport systems. The Phase I facility using the ORIC-25 MV tandem combination will provide energies up to about 25 MeV/amu for light ions such as oxygen and more than 5 MeV/amu up to the region of mass 160. The new Phase II separated-sector cyclotron will provide energies up to 100 MeV/amu for light ions and up to 12 MeV/amu for the heaviest ions such as uranium.
Author: United States. Energy Research and Development Administration. Technical Information Center Publisher: ISBN: Category : Force and energy Languages : en Pages : 1066
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Author: Institute of Electrical and Electronics Engineers
Author: G. Gendreau