Author: Lin WangPublisher:
ISBN:
Category :
Languages : en
Pages : 45
Book Description
Design, Simulation, Fabrication and Characterization of the Insulated Gate Bipolar Transistor with Base Resistance Controlled Thyristor (IGBT/BRT).
Author: Lin WangModeling, Design, Fabrication, and Characterization of the Insulated Gate Bipolar Transistor (IGBT) with Integrated Current Sensors
Author: Cheng ShenInsulated Gate Bipolar Transistor IGBT Theory and Design
Author: Vinod Kumar KhannaPublisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
The IGBT Device
Author: B. Jayant BaligaPublisher: William Andrew
ISBN: 1455731536
Category : Technology & Engineering
Languages : en
Pages : 733
Book Description
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Design, Simulation and Modeling of Insulated Gate Bipolar Transistor
Author: Kaustubh GuptaPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6% more efficient in terms of performance (current per unit area) over that of squares, and up to 80% more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/151277
Design, Fabrication & Characterization of LkV Integrated DMOS Insulated Gate Bipolar Transistor/merged Pin Schottky Rectifier Devices
Author: Ramanan NatarajanModeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region
Author: Farah P. VandrevalaPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.
Design, Fabrication and Characterization of a Silicon Bipolar Transistor
Author: Jiun-yih YuPublisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 286
Book Description
The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor
Author: Design and Realization of Bipolar Transistors
Author: Peter AshburnPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 222
Book Description
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.