Author: Aniket A. BreedPublisher:
ISBN:
Category :
Languages : en
Pages : 362
Book Description
Silicon-only MOSFETs have fast approached their scaling limitations and new technologies are constantly being investigated with an intention to replace the planar silicon-only MOSFET. The Silicon-on-Insulator (SOI) technology is the forerunner in many such ongoing investigations. Devices fabricated using this technology exhibit reduced junction capacitances, lower leakage currents and higher ease of integration when scaled into the sub-nanometer regime. With the advent of novel and reliable fabrication techniques, multi-gate SOI devices viz. the FinFET, TriGate, Omega-gate and Quadruple gate MOSFETs are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. This study examines the switching and RF performance of these multi-gate devices under aggressive scaling conditions with the aid of three dimensional numerical simulations. The primary focus of investigation is a variation in the subthreshold device performance when subjected to a change in dimensions. Also investigated are the effects of variation in the lengths of the extension and LDD regions on the subthreshold device performance of these multi-gate MOSFETS. The study also includes an analysis of the subthreshold behavior under high temperature conditions. Most importantly, this study investigates the microwave performance of the devices via a simulation analysis of their small-signal behavior. The variation in the microwave performance of these devices is further extended to include the effects of variation in the length of the extension regions on the RF device performance. In conjunction with N-channel devices, the study also focuses on P-channel devices and compares the performances of the two. Out of the four multi-gate SOI device structures, the FinFET and the TriGate appear to be the most promising alternatives to replace the conventional MOSFET in future applications.