Author: Dong GanPublisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
Design, Fabrication, and Characterization of W/SiGe/Si Raised Single Source/drains for Sub-100nm CMOS and Sub-70nm Fully Self-aligned Double-gate CMOS
Author: Dong GanDesign, Fabrication, and Characterization of Tungsten/silicon Germanium/silicon Raised Single Source/drains for Sub-100nm CMOS and Sub-70nm Fully Self-aligned Double-gated CMOS.
Author: Dong GanPublisher:
ISBN: 9780599831292
Category :
Languages : en
Pages : 180
Book Description
With the continuation of CMOS device scaling to sub-100nm generations, one of the key challenges is to produce abruptly doped ultra-shallow source/drain junctions with low series resistance for maximum short channel effect (SCE) immunity and high current drive. The W/SiGe/Si raised single source/drain structure would ultimately provide a source/drain contact resistivity of 1--3 x 10-8 O-cm2 and a junction depth less than 30nm. Process integration for W/SiGe/Si into raised single source/drains in sub-100nm CMOS has been developed. Processes developed include sub-100nm gate and source/drain patterning, thin sidewall spacer control, CMP of blanket polycrystalline Si0.7Ge0.3, selective W CVD, and CMP of blanket W CVD. Silicon nitride sidewall spacers as thin as 14nm were achieved with low leakage currents. Good diode characteristics have been measured for P+/N W/SiGe/Si diodes, and N+/P SiGe/Si diodes. Ideality factors are 1.04 and 1.10, respectively. CMOS device characteristics were demonstrated for long channel PMOS with W/SiGe/Si raised source/drains and 200nm NMOS with SiGe/Si raised source/drains. The W/SiGe/Si raised single source/drains can be further extended well below the 100nm CMOS node.
Chemical Abstracts
Author: American Doctoral Dissertations
Author: Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 848
Book Description
Semiconductor Material and Device Characterization
Author: Dieter K. SchroderPublisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Atomic Layer Deposition for Semiconductors
Author: Cheol Seong HwangPublisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Wafer Bonding
Author: Marin AlexePublisher: Springer Science & Business Media
ISBN: 3662108275
Category : Science
Languages : en
Pages : 510
Book Description
The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Electrical Characterization of Silicon-on-Insulator Materials and Devices
Author: Sorin CristoloveanuPublisher: Springer Science & Business Media
ISBN: 1461522455
Category : Technology & Engineering
Languages : en
Pages : 389
Book Description
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Fundamentals of III-V Semiconductor MOSFETs
Author: Serge OktyabrskyPublisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Compact Modeling
Author: Gennady GildenblatPublisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.