Author: Mohammad Reza RakhshandehrooPublisher:
ISBN:
Category :
Languages : en
Pages : 454
Book Description
Design, Fabrication, and Characterization of Self-aligned Gated Silicon Field Emission Devices
Author: Mohammad Reza RakhshandehrooPublisher:
ISBN:
Category :
Languages : en
Pages : 454
Book Description
Design, Fabrication and Characterization of Gated Silicon Field Emission Devices
Author: Johann Thomas TrujilloPublisher:
ISBN:
Category :
Languages : en
Pages : 388
Book Description
Fabrication and Characterization of Gated Silicon Field Emission Micro Triodes
Author: Nanchou LiuPublisher:
ISBN:
Category : Field emission
Languages : en
Pages : 230
Book Description
Fabrication and Characterization of Silicon Field Emitter Arrays
Author: Aaron M. BrockPublisher:
ISBN:
Category : Electrons
Languages : en
Pages : 168
Book Description
Scientific and Technical Aerospace Reports
Author: Wide Bandgap Based Devices
Author: Farid MedjdoubPublisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Nanometric Silicon Device Design, Fabrication and Characterization
Author: Mansun J. ChanDevelopment of Vertical Nanodiamond Vacuum Field Emission Microelectronic Integrated Devices
Author: Shao-Hua HsuPublisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 178
Book Description
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 764
Book Description
Micropropulsion for Small Spacecraft
Author: Michael Matthew MicciPublisher: AIAA
ISBN: 9781600864391
Category : Microspacecraft
Languages : en
Pages : 520
Book Description