Design and Technology of Millimeter-wave InA1A/InGaAs High Electron Mobility Transistors (HEMT's) and Monolithic Integrated Circuits PDF Download

Author: Youngwoo Kwon
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Eoin Carey
Publisher: Springer Science & Business Media
ISBN: 038723666X
Category : Technology & Engineering
Languages : en
Pages : 277

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Book Description
Millimeter-Wave Integrated Circuits delivers a detailed overview of MMIC design, specifically focusing on designs for the millimeter-wave (mm-wave) frequency range. The scope of the book is broad, spanning detailed discussions of high-frequency materials and technologies, high-frequency devices, and the design of high-frequency circuits. The design material is supplemented as appropriate by theoretical analyses. The broad scope of the book gives the reader a good theoretical and practical understanding of mm-wave circuit design. It is best-suited for both undergraduate students who are reading or studying high frequency circuit design and postgraduate students who are specializing in the mm-wave field.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 7

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This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communication circuits. Recently, JPL has developed several HEMT MMIC circuits using HRL Laboratories' 0.1 micrometer InP HEMT technology with unprecedented high frequency performance and output power. Results include an 80 OHz bandwidth power amplifier to 145 GHz, a 15-25 mW amplifier to 170 GHz and a HEMT active doubler to 300 GHz, the highest frequency HEMT doubler circuit reported to date. Included here is a description of the design and testing of the circuits, and a discussion of the methods used in measuring MMICs above 200 UHz. These circuits are particularly useful in local oscillators for heterodyne receivers at THz frequencies.

Author: Mladen Božanić
Publisher: Springer Nature
ISBN: 3030443981
Category : Technology & Engineering
Languages : en
Pages : 259

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Book Description
This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.

Author: Sorin Voinigescu
Publisher: Cambridge University Press
ISBN: 110731061X
Category : Technology & Engineering
Languages : en
Pages : 921

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Book Description
A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS and III-V technologies. Step-by-step design methodologies, end-of-chapter problems and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.

Author: Ali M. Niknejad
Publisher: Springer Science & Business Media
ISBN: 0387765611
Category : Technology & Engineering
Languages : en
Pages : 313

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Book Description
This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.

Author: Jinshan Shi
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
The development of future flexible electronics requires combining high electrical performance devices (i.e. millimeter and sub-millimeter wave electronic devices) with mechanical flexiblility and stability. However, a variety of existing technologies such as organic thin film transistors, amorphous silicon, and polycrystalline-silicon are limited by their poor transport properties. High electron mobility transistors (HEMTs) based on III-V materials have been used in the field of ultra-high frequency microwave applications for a long time. This work develops a feasible method for transferring conventional HEMTs onto the flexible substrate. By the means of adhesive bonding technique, 100nm-gate InAlAs/InGaAs HEMTs have been transferred onto polyimide film (Kapton) and electrically characterized in static and dynamic regime. Through the epitaxial layers optimization, finally, the fabricated devices are able to suppress Kink effect and provide high cut-off frequencies (ft=160GHz and fmax=290GHz) in unbent condition. These microwave characteristics are comparable to those obtained on 100nm-gate HEMTs on rigid substrate. Moreover, measured devices for various bending radius and bending directions show no obvious electrical degradation (lower than 15%).

Author: M. J. Morant
Publisher: Springer
ISBN: 148997198X
Category : Technology & Engineering
Languages : en
Pages : 199

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Author: Fazal Ali
Publisher: Artech House Publishers
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 510

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Tells the reader all he ever wanted to know about heterojunction transistors and their applications -- a good set of technical papers that leaves very few unanswered questions. -- Microwave Journal

Author: Johann-Friedrich Luy
Publisher: Springer Science & Business Media
ISBN: 3642790313
Category : Technology & Engineering
Languages : en
Pages : 359

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Book Description
A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.