Design and Simulation of Single-crystal Diamond Diodes for High Voltage, High Power and High Temperature Applications PDF Download

Author: Nutthamon Suwanmonkha
Publisher:
ISBN: 9781369019612
Category : Electronic dissertations
Languages : en
Pages : 118

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Author: Lawrence S. Pan
Publisher: Springer Science & Business Media
ISBN: 1461522579
Category : Technology & Engineering
Languages : en
Pages : 482

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Book Description
The use of diamond for electronic applications is not a new idea. As early as the 1920's diamonds were considered for their use as photoconductive detectors. However limitations in size and control of properties naturally limited the use of diamond to a few specialty applications. With the development of diamond synthesis from the vapor phase has come a more serious interest in developing diamond-based electronic devices. A unique combination of extreme properties makes diamond partiCularly well suited for high speed, high power, and high temperature applications. Vapor phase deposition of diamond allows large area films to be deposited, whose properties can potentially be controlled. Since the process of diamond synthesis was first realized, great progress have been made in understanding the issues important for growing diamond and fabricating electronic devices. The quality of both intrinsic and doped diamond has improved greatly to the point that viable applications are being developed. Our understanding of the properties and limitations has also improved greatly. While a number of excellent references review the general properties of diamond, this volume summarizes the great deal of literature related only to electronic properties and applications of diamond. We concentrate only on diamond; related materials such as diamond-like carbon (DLC) and other wide bandgap semiconductors are not treated here. In the first chapter Profs. C. Y. Fong and B. M. Klein discuss the band structure of single-crystal diamond and its relation to electronic properties.

Author: Shannon Singer Nicley
Publisher:
ISBN: 9781321734010
Category : Electronic dissertations
Languages : en
Pages : 168

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Author: Satoshi Koizumi
Publisher: Woodhead Publishing
ISBN: 0081021844
Category : Technology & Engineering
Languages : en
Pages : 468

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Book Description
Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Author: Satoshi Koizumi
Publisher: John Wiley & Sons
ISBN: 3527623183
Category : Technology & Engineering
Languages : en
Pages : 374

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Book Description
Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitonic properties, while application aspects include quantum electronics at room temperature, biosensors as well as diamond nanocantilevers and SAWs. Written in a review style to make the topic accessible for a wider community of scientists working in interdisciplinary fields with backgrounds in physics, chemistry, biology and engineering, this is essential reading for everyone working in environments that involve conventional electronics, biotechnology, quantum computing, quantum cryptography, superconductivity and light emission from highly excited excitonic systems.

Author: Mihai Brezeanu
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Research on wide band gap semiconductors suitable for power electronicdevices has spread rapidly in the last decade. The remarkable results exhibited bysilicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since2001, showed the potential of wide band gap semiconductors for replacing silicon (Si)in the range of medium to high voltage applications, where high frequency operationis required. With superior physical and electrical properties, diamond became apotential competitor to SiC soon after Element Six reported in 2002 the successfulsynthesis of single crystal plasma deposited diamond with high catTier mobility. This thesis discusses the remarkable properties of diamond and introducesseveral device structures suitable for power electronics. The calculation of severalfigures of merit emphasize the advantages of diamond with respect to silicon andother wide band gap semiconductors and clearly identifies the areas where its impactwould be most significant. Information regarding the first synthesis of diamond, which took place back in 1954, together with data regarding the modern technologicalprocess which leads nowadays to high-quality diamond crystals suitable for electronicdevices, are reviewed. Models regarding the incomplete ionization of atomic dopantsand the variation of catTier mobility with doping level and temperature have beenelaborated and included in numerical simulators. The study introduces the novel diamond M-i-P Schottky diode, a version ofpower Schottky diode which takes advantage of the extremely high intrinsic holemobility. The structure overcomes the drawback induced by the high activationenergies of acceptor dopants in diamond which yield poor hole concentration at roomtemperature. The complex shape of the on-state characteristic exhibited by diamondM-i-P Schottky structures is thoroughly investigated by means of experimentalresults, numerical simulations and theoretical considerations. The fabrication of a ramp oxide termination on a diamond device is for thefirst time reported in this thesis. Both experimental and simulated results show thepotential of this termination structure, previously built on Si and SiC power devices. A comprehensive comparison between the ramp oxide and two other versions of thefield plate termination concept, the single step and the three-step structures, has beenperformed, considering aspects such as electrical performance, occupied area, complexity of technological process and cost. Based on experimental results presented in this study, together withpredictions made via simulations and theoretical models, it is concluded that diamondM-i-P Schottky diodes have the ability to deliver significantly higher performancecompared to that of SiC SBDs if issues such as material defects, Schottky contactformation and measurement of reliable ionization coefficients are carefully addressedin the near future.

Author: Bernhard Dischler
Publisher: Springer Science & Business Media
ISBN: 3642719929
Category : Science
Languages : en
Pages : 383

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Book Description
A comprehensive presentation of the complete spectrum of methods for CVD-diamond deposition and an overview of the most important applications.

Author: Robert Leoni
Publisher: World Scientific
ISBN: 9814480800
Category : Technology & Engineering
Languages : en
Pages : 314

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Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.

Author: Awadesh Mallik
Publisher: BoD – Books on Demand
ISBN: 183968531X
Category : Technology & Engineering
Languages : en
Pages : 122

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Book Description
Diamond offers many advantages over other wide-bandgap materials and thus is a very important material in engineering applications. It can be used in high-speed electronics and response systems as well as high-power laser windows, protective coatings, electrochemical sensors, and more. This book examines the properties, advantages, and potential applications of diamonds in engineering and other fields.

Author: Amanda Charris-Hernandez
Publisher:
ISBN: 9780355219593
Category : Electronic dissertations
Languages : en
Pages : 296

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Book Description