Design and Performance Trade-offs in IGBT Modules for Hard- and Soft-switching Applications PDF Download

Author: Sameer P. Pendharkar
Publisher:
ISBN:
Category :
Languages : en
Pages : 304

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Author: Malay Trivedi
Publisher:
ISBN:
Category :
Languages : en
Pages : 324

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Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904

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Author: Andreas Volke
Publisher:
ISBN: 9783000401343
Category : Insulated gate bipolar transistors
Languages : en
Pages : 534

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Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 344

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Author: Vinod Kumar Khanna
Publisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648

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Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Author: Hongyu Yu
Publisher: CRC Press
ISBN: 1351767607
Category : Science
Languages : en
Pages : 301

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Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Author: IEEE Industry Applications Society. Meeting
Publisher:
ISBN:
Category : Electric machinery
Languages : en
Pages : 800

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Author: Zhanyou Sha
Publisher: John Wiley & Sons
ISBN: 1118790944
Category : Technology & Engineering
Languages : en
Pages : 432

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Book Description
A contemporary evaluation of switching power design methods with real world applications • Written by a leading author renowned in his field • Focuses on switching power supply design, manufacture and debugging • Switching power supplies have relevance for contemporary applications including mobile phone chargers, laptops and PCs • Based on the authors' successful "Switching Power Optimized Design 2nd Edition" (in Chinese) • Highly illustrated with design examples of real world applications

Author: Matteo Meneghini
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383

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Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.