Author: 許博堯Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Design and Implementation of Ku-band Low-noise Amplifier and Power Amplifier
Author: 許博堯Design of Low-Noise Amplifiers for Ultra-Wideband Communications
Author: Roberto Díaz OrtegaPublisher: McGraw Hill Professional
ISBN: 0071824448
Category : Technology & Engineering
Languages : en
Pages : 129
Book Description
Cutting-edge techniques for ultra-wideband, low-noise amplifier design This pioneering resource presents alternatives for implementing power- and area-efficient integrated low-noise amplifiers for ultra-wideband communications. Design methodologies for distributed amplifiers, feedback amplifiers, inductor structures with reduced area, and inductorless techniques are discussed. Cowritten by international experts in industry and academia, this book addresses the state of the art in integrated circuit design in the context of emerging systems. Design of Low-Noise Amplifiers for Ultra-Wideband Communications covers: Ultra-wideband overview and system approach Distributed amplifiers Wideband low-noise amplifiers Feedback wideband low-noise amplifiers Inductorless techniques
Millimeter-Wave Low Noise Amplifiers
Author: Mladen BožanićPublisher: Springer
ISBN: 3319690205
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
This book is the first standalone book that combines research into low-noise amplifiers (LNAs) with research into millimeter-wave circuits. In compiling this book, the authors have set two research objectives. The first is to bring together the research context behind millimeter-wave circuit operation and the theory of low-noise amplification. The second is to present new research in this multi-disciplinary field by dividing the common LNA configurations and typical specifications into subsystems, which are then optimized separately to suggest improvements in the current state-of-the-art designs. To achieve the second research objective, the state-of-the-art LNA configurations are discussed and the weaknesses of state-of the art configurations are considered, thus identifying research gaps. Such research gaps, among others, point towards optimization – at a systems and microelectronics level. Optimization topics include the influence of short wavelength, layout and crosstalk on LNA performance. Advanced fabrication technologies used to decrease the parasitics of passive and active devices are also explored, together with packaging technologies such as silicon-on-chip and silicon-on-package, which are proposed as alternatives to traditional IC implementation. This research outcome builds through innovation. Innovative ideas for LNA construction are explored, and alternative design methodologies are deployed, including LNA/antenna co-design or utilization of the electronic design automation in the research flow. The book also offers the authors’ proposal for streamlined automated LNA design flow, which focuses on LNA as a collection of highly optimized subsystems.
Two-stage Ku-band Low Noise Amplifier Operating at 18 GHz
Author: Aditya Y. VadalkarPublisher:
ISBN:
Category :
Languages : en
Pages : 61
Book Description
This report is about the design of a Ku-band two-stage low noise amplifier working at an operating frequency of 18 GHz. The specification of this low noise amplifier includes a gain, which is greater than 25dB and a low noise figure less than 1dB. The transistor used to design is ATF-36077 manufactured by Hewlett-Packard which is an ultra-low noise transistor providing a high and stable gain at the required frequency along with a low noise figure. The results obtained after running the simulations concluded that the two-stage low noise amplifier satisfactorily provided a power gain of about 24.7 dB and a low noise figure of about 0.68dB. As a result, cascading the two-stages consisting first stage as a minimum noise amplifier (MNA) and second stage as a maximum gain amplifier (MGA) helped us to achieve the specified requirements. The minimum noise amplifier stage helped us to reduce the noise at the input while the maximum gain amplifier stage helped us increase the gain. The matching networks at input and output terminals helped in achieving gain stability at the output. The schematic was implemented using the Agilent's Advanced Design System (ADS) software. The circuit simulation was carried out in the same software and the results were verified. The results were also verified using the hand calculations and MATLAB software. At the end, the final layout was designed and sketched.
Design of Three Stage Ku Band Low Noise Amplifier Operating at 15Ghz
Author: Praveen D'souzaPublisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
Design of Three stage Ku band Low Noise Amplifier operating at 15 GHz By Praveen D'souza Master of Science in Electrical Engineering The main aim of this project is to simulate and design a three stage Ku band Low Noise Amplifier to find the gain and noise figure at 15GHz. In order to fulfil this requirement of high gain and low noise, a transistor MGF4965BM is chosen. This transistor belongs to Mitsubishi Electric Corporation and is basically a very low noise GaAs HEMT. It is desired to get a gain of more than 30dB with a low noise figure lower than 2dB. Microstrip lines are used to design the input and output matching networks to get the desired gain with low noise figure. The amplifier design must be a multistage design, i.e. it has more than single transistor. All the results were verified using hand calculations, MATLAB and RF and Microwave software. The three stage LNA design and simulation was done using Microwave AWR Office Software. Operating Frequency15GHz Total Gain> 30dB Total Noise Figure
Power Amplifiers for the S-, C-, X- and Ku-bands
Author: Mladen BožanićPublisher: Springer
ISBN: 3319283766
Category : Technology & Engineering
Languages : en
Pages : 347
Book Description
This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.
Three Stage Ku Band Low Noise Amplifier at 16 GHz
Author: Soham JagalpurePublisher:
ISBN:
Category :
Languages : en
Pages : 83
Book Description
In order to design an amplifier at a certain frequency, the gain and noise figure needs to be decided on the basis of the market research. After deciding these three values, a transistor was selected such that it helped to achieve these values. The formulas used in the design process determined the number of stages required to complete the design and to measure the performance of the amplifier. After reviewing more than fifty transistors, the transistor FHX13/14LG was decided for the design of Low Noise Amplifier in the Ku Band at 16 GHz. The design objective was to achieve 40 dB gain with a noise figure of less than 1dB at the specified frequency. After the preliminary calculations, it was concluded that there will be three stages based on the selected transistor. The finalization of each stage was a challenge because of the trade-off issues in gain and noise figure. In order to verify the results, National Instruments Microwave Office (student version) was used for simulation. It gave the simulation values which were very close to the hand calculations. This was also verified using MATLAB along-with an RF/MW E-Book Software* software developed by Dr. Matthew Radmanesh with his published book "Advanced RF & Microwave Circuit Design" for accuracy.
Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation
Author: Federico BruccoleriPublisher: Springer Science & Business Media
ISBN: 1402031882
Category : Technology & Engineering
Languages : en
Pages : 191
Book Description
Low Noise Amplifiers (LNAs) are commonly used to amplify signals that are too weak for direct processing for example in radio or cable receivers. Traditionally, low noise amplifiers are implemented via tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. This can render very low noise but only in a relatively narrow frequency band close to resonance. There is a clear trend to use more bandwidth for communication, both via cables (e.g. cable TV, internet) and wireless links (e.g. satellite links and Ultra Wideband Band). Hence wideband low-noise amplifier techniques are very much needed. Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation explores techniques to realize wideband amplifiers, capable of impedance matching and still achieving a low noise figure well below 3dB. This can be achieved with a new noise cancelling technique as described in this book. By using this technique, the thermal noise of the input transistor of the LNA can be cancelled while the wanted signal is amplified! The book gives a detailed analysis of this technique and presents several new amplifier circuits. This book is directly relevant for IC designers and researchers working on integrated transceivers. Although the focus is on CMOS circuits, the techniques can just as well be applied to other IC technologies, e.g. bipolar and GaAs, and even in discrete component technologies.
Design and Implementation of a Silicon-germanium Low Noise Amplifier for W-band Imaging Applications
Author: Francis M. Caster (II.)Publisher:
ISBN: 9781267454232
Category :
Languages : en
Pages : 41
Book Description
This paper presents the design of a 4-stage SiGe W-band low-noise high-gain amplifier suitable for imaging applications designed in a 200GHz fT SiGe BiCMOS process (TowerJazz H3). The amplifier was designed with a gain of 40 dB over a 3-dB bandwidth of 80- 100GHz, a noise figure NF of 6-7 dB in-band, and a power consumption of 19 mA at 1.8V (excluding all biasing). The amplifier is 0.07 mm2 without pads.
Author: