Author: Simon Li
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics
Author: Simon Li
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
High Temperature Electronics
Author: F. Patrick McCluskey
Publisher: CRC Press
ISBN: 9780849396236
Category : Technology & Engineering
Languages : en
Pages : 354
Book Description
The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.
Publisher: CRC Press
ISBN: 9780849396236
Category : Technology & Engineering
Languages : en
Pages : 354
Book Description
The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.
Fabrication Engineering at the Micro and Nanoscale
Author: Stephen A. Campbell
Publisher: OUP USA
ISBN: 9780195320176
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
Designed for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, the third edition of Fabrication Engineering at the Micro and Nanoscale provides a thorough and accessible introduction to all fields of micro and nano fabrication.
Publisher: OUP USA
ISBN: 9780195320176
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
Designed for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, the third edition of Fabrication Engineering at the Micro and Nanoscale provides a thorough and accessible introduction to all fields of micro and nano fabrication.
Ultra-thin Chip Technology and Applications
Author: Joachim Burghartz
Publisher: Springer Science & Business Media
ISBN: 1441972765
Category : Technology & Engineering
Languages : en
Pages : 471
Book Description
Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, Microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.
Publisher: Springer Science & Business Media
ISBN: 1441972765
Category : Technology & Engineering
Languages : en
Pages : 471
Book Description
Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, Microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.
Advances in Communication, Devices and Networking
Author: Rabindranath Bera
Publisher: Springer
ISBN: 9811334501
Category : Technology & Engineering
Languages : en
Pages : 574
Book Description
The book covers recent trends in the field of devices, wireless communication and networking. It presents the outcomes of the International Conference in Communication, Devices and Networking (ICCDN 2018), which was organized by the Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim, India on 2–3 June, 2018. Gathering cutting-edge research papers prepared by researchers, engineers and industry professionals, it will help young and experienced scientists and developers alike to explore new perspectives, and offer them inspirations on addressing real-world problems in the field of electronics, communication, devices and networking.
Publisher: Springer
ISBN: 9811334501
Category : Technology & Engineering
Languages : en
Pages : 574
Book Description
The book covers recent trends in the field of devices, wireless communication and networking. It presents the outcomes of the International Conference in Communication, Devices and Networking (ICCDN 2018), which was organized by the Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim, India on 2–3 June, 2018. Gathering cutting-edge research papers prepared by researchers, engineers and industry professionals, it will help young and experienced scientists and developers alike to explore new perspectives, and offer them inspirations on addressing real-world problems in the field of electronics, communication, devices and networking.
High Dielectric Constant Materials
Author: Howard Huff
Publisher: Springer Science & Business Media
ISBN: 9783540210818
Category : Science
Languages : en
Pages : 740
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Publisher: Springer Science & Business Media
ISBN: 9783540210818
Category : Science
Languages : en
Pages : 740
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Introduction to Thin Film Transistors
Author: S.D. Brotherton
Publisher: Springer Science & Business Media
ISBN: 3319000020
Category : Technology & Engineering
Languages : en
Pages : 467
Book Description
Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Publisher: Springer Science & Business Media
ISBN: 3319000020
Category : Technology & Engineering
Languages : en
Pages : 467
Book Description
Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Power Aware Design Methodologies
Author: Massoud Pedram
Publisher: Springer Science & Business Media
ISBN: 1402071523
Category : Computers
Languages : en
Pages : 533
Book Description
Presents various aspects of power-aware design methodologies, covering the design hierarchy from technology, circuit logic, and architectural levels up to the system layer. This book includes discussion of techniques and methodologies for improving the power efficiency of CMOS circuits, systems on chip, microelectronic systems, and so on.
Publisher: Springer Science & Business Media
ISBN: 1402071523
Category : Computers
Languages : en
Pages : 533
Book Description
Presents various aspects of power-aware design methodologies, covering the design hierarchy from technology, circuit logic, and architectural levels up to the system layer. This book includes discussion of techniques and methodologies for improving the power efficiency of CMOS circuits, systems on chip, microelectronic systems, and so on.
National Semiconductor Metrology Program
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 146
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 146
Book Description
Nyquist AD Converters, Sensor Interfaces, and Robustness
Author: Arthur van Roermund
Publisher: Springer
ISBN: 9781489997944
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
This book is based on the 18 presentations during the 21st workshop on Advances in Analog Circuit Design. Expert designers provide readers with information about a variety of topics at the frontier of analog circuit design, including Nyquist analog-to-digital converters, capacitive sensor interfaces, reliability, variability, and connectivity. This book serves as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development.
Publisher: Springer
ISBN: 9781489997944
Category : Technology & Engineering
Languages : en
Pages : 0
Book Description
This book is based on the 18 presentations during the 21st workshop on Advances in Analog Circuit Design. Expert designers provide readers with information about a variety of topics at the frontier of analog circuit design, including Nyquist analog-to-digital converters, capacitive sensor interfaces, reliability, variability, and connectivity. This book serves as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development.