Author: Bruce Bennett DorisPublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 248
Book Description
Effects of hydrogen termination on the low temperature growth mode Si on Si(100) by remote plasma enhanced chemical vapor deposition
Author: Bruce Bennett DorisPublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 248
Book Description
Low Temperature Plasma Enhanced Chemical Vapor Deposition of Silicon Oxide and Microcrystalline Silicon on Organic and Inorganic Substrates
Author: Christopher G. MakosiejPublisher:
ISBN:
Category : Plasma-enhanced chemical vapor disposition
Languages : en
Pages : 222
Book Description
Plasma Enhanced Chemical Vapor Deposition of Silicon Based Thin Film Materials
Author: Ashfaqul Islam ChowdhuryPublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 374
Book Description
Plasma Deposition of Amorphous Silicon-Based Materials
Author: Pio CapezzutoPublisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Plasma-enhanced Chemical Vapor Deposition of Silicon Oxynitrides
Author: Joseph Edward SchoenholtzPublisher:
ISBN:
Category :
Languages : en
Pages : 390
Book Description
Chemical Vapor Deposition for Microelectronics
Author: Arthur ShermanPublisher: William Andrew
ISBN:
Category : Computers
Languages : en
Pages : 240
Book Description
Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Remote plasma enhanced chemical vapor deposition of silicon on silicon
Author: Brian George AnthonyPublisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 172
Book Description
Methods for Passivating Silicon Devices at Low Temperature to Achieve Low Interface State Density and Low Recombination Velocity While Preserving Carrier Lifetime
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
A new process has been developed to achieve a very low SiO.sub.x /Si interface state density D.sub.it, low recombination velocity S (2 cm/s), and high effective carrier lifetime T.sub.eff (5 ms) for oxides deposited on silicon substrates at low temperature. The technique involves direct plasma-enhanced chemical vapor deposition (PECVD), with appropriate growth conditions, followed by a photo-assisted rapid thermal annealing (RTA) process. Approximately 500-A-thick SiO.sub.x layers are deposited on Si by PECVD at 250.degree. C. with 0.02 W/cm.sup.-2 rf power, then covered with SiN or an evaporated thin aluminum layer, and subjected to a photo-assisted anneal in forming gas ambient at 350.degree. C., resulting in an interface state density D.sub.it in the range of about 1-4.times. 10.sup. 10 cm.sup.-2 eV.sup.-1, which sets a record for the lowest interface state density D.sub.it for PECVD oxides fabricated to date. Detailed analysis shows that the PECVD deposition conditions, photo-assisted anneal, forming gas ambient, and the presence of an aluminum layer on top of the oxides during the anneal, all contributed to this low value of interface state density D.sub.it. Detailed metal-oxide semiconductor analysis and model calculations show that such a low recombination velocity S is the result of moderately high positive oxide charge (5.times. 10.sup. 11 -1.times. 10.sup. 12 cm.sup.-2) and relatively low midgap interface state density (1.times. 10.sup. 10 -4.times. 10.sup. 10 cm.sup.-2 eV.sup.-1). Photo-assisted anneal was found to be superior to furnace annealing, and a forming gas ambient was better than a nitrogen ambient for achieving a very low surface recombination velocity S.
Plasma-Enhanced Chemical Vapor Deposition of Silicon and Silicon-Containing Films
Author: DW. HessPublisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 8
Book Description
The use of a radio frequency (rf) glow discharge or plasma has recently come into favor for the deposition of thin films. In plasma-enhanced chemical vapor deposition (PECVD), chemical reactions can be carried out at low (
Low Temperature Atomic Layer Epitaxy of Silicon in a Low Pressure Chemical Vapor Deposition Reactor
Author: Forrest Gregg McIntoshPublisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 248
Book Description