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Author: S. Ashok Publisher: Cambridge University Press ISBN: 9781558994164 Category : Technology & Engineering Languages : en Pages : 0
Book Description
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Author: S. Ashok Publisher: Cambridge University Press ISBN: 9781558994164 Category : Technology & Engineering Languages : en Pages : 0
Book Description
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Author: I. Akasaki Publisher: Materials Research Society ISBN: 9781558992818 Category : Technology & Engineering Languages : en Pages : 0
Book Description
Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.
Author: Electrochemical Society. Meeting Publisher: The Electrochemical Society ISBN: 9781566772846 Category : Science Languages : en Pages : 720
Book Description
"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Author: S. Ashok
Author: S. Ashok
Author: 
Author: John C. Bravman
Author: 
Author: Howard R. Huff
Author: I. Akasaki
Author: C. S. Murthy
Author: Susan M. Kauzlarich
Author: Cor L. Claeys
Author: Electrochemical Society. Meeting