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Author: Publisher: ISBN: Category : Languages : en Pages : 24
Book Description
In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.
Author: Publisher: ISBN: Category : Languages : en Pages : 24
Book Description
In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.
Author: Publisher: Academic Press ISBN: 0080864430 Category : Technology & Engineering Languages : en Pages : 335
Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author: C. Claeys Publisher: Springer Science & Business Media ISBN: 3662049740 Category : Science Languages : en Pages : 424
Book Description
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author: A. H. Agajanian Publisher: Springer ISBN: Category : Reference Languages : en Pages : 282
Book Description
During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
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Author: N. G. Emerson
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Author: Chung-Hsu Chen
Author: D. Stiévenard
Author: Hugh Thomas
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Author: C. Claeys
Author: A. H. Agajanian