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Author: William H. Haydl Publisher: ISBN: Category : Crystals Languages : en Pages : 222
Book Description
The report describes the discovery of 'square-wave' type current oscillations and the traveling high electric field domains in cadmium sulfide. Numerous experiments were performed to determine the behavior of the traveling domain, the oscillation conditions and important parameters. Experimental results lead to the conclusion that both current saturation and current oscillations as observed are due to amplification of the shear wave components of thermal acoustic noise. A simple linear theory which predicts the occurrence of current oscillations in piezoelectric semiconductors has been developed. The saturation of the sample current is also treated theoretically. Good agreement with experimental results is obtained with both theories. The effect of the current saturation and the oscillations on the amplification of an acoustic signal is discussed. Theory indicates that the maximum possible acoustic gain is of the order of 75-100 dB. (Author).
Author: William H. Haydl Publisher: ISBN: Category : Crystals Languages : en Pages : 222
Book Description
The report describes the discovery of 'square-wave' type current oscillations and the traveling high electric field domains in cadmium sulfide. Numerous experiments were performed to determine the behavior of the traveling domain, the oscillation conditions and important parameters. Experimental results lead to the conclusion that both current saturation and current oscillations as observed are due to amplification of the shear wave components of thermal acoustic noise. A simple linear theory which predicts the occurrence of current oscillations in piezoelectric semiconductors has been developed. The saturation of the sample current is also treated theoretically. Good agreement with experimental results is obtained with both theories. The effect of the current saturation and the oscillations on the amplification of an acoustic signal is discussed. Theory indicates that the maximum possible acoustic gain is of the order of 75-100 dB. (Author).
Author: Juras Pozhela Publisher: Elsevier ISBN: 1483189384 Category : Science Languages : en Pages : 319
Book Description
Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift instabilities. The text also discusses hot electrons, along with the instabilities due to inter-valley electron transfer. The next chapters talks about avalanche and recombination instabilities. The last chapter deals with plasma streams. The book will be of great use to student and professional electronics engineers and technicians.
Author: N. Balkan Publisher: ISBN: 9780198500582 Category : Science Languages : en Pages : 536
Book Description
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Author: N. Balkan Publisher: Springer Science & Business Media ISBN: 1461528224 Category : Technology & Engineering Languages : en Pages : 437
Book Description
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.
Author: Chihiro Hamaguchi Publisher: Springer Science & Business Media ISBN: 3662046563 Category : Technology & Engineering Languages : en Pages : 444
Book Description
A detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced.
Author: William H. Haydl
Author: William H. Haydl
Author: Juras Pozhela
Author: Halvor Skeie
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Author: Defense Documentation Center (U.S.)
Author: N. Balkan
Author: N. Balkan
Author: 
Author: Chihiro Hamaguchi
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