Author: E. K. Stefanakos Publisher: ISBN: Category : Languages : en Pages : 58
Book Description
The primary objective of this study was to determine the optimum growth parameters for preparing uniform epitaxial crystalline layers of InAs, InSb, InAsSb and Si using the current controlled liquid phase epitaxy (CCLPE) technique. The original objective was later altered and the effort concentrated on the growth of InAs and Si by CCLPE. (Author).
Author: M. G. Astles Publisher: CRC Press ISBN: Category : Art Languages : en Pages : 240
Book Description
An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Author: A. Abul-Fadl Publisher: ISBN: Category : Languages : en Pages : 63
Book Description
The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES).
Author: Peter Capper Publisher: John Wiley & Sons ISBN: 9780470319499 Category : Technology & Engineering Languages : en Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Author: Gerald B. Stringfellow Publisher: Elsevier ISBN: 0323139175 Category : Science Languages : en Pages : 417
Book Description
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Author: Tom Kuech Publisher: Elsevier ISBN: 0444633057 Category : Science Languages : en Pages : 1384
Book Description
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Author: B Baliga Publisher: Elsevier ISBN: 0323155456 Category : Technology & Engineering Languages : en Pages : 337
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Author: E. K. Stefanakos
Author: Salem Omar Issa
Author: Ali Abul-Fadl
Author: M. G. Astles
Author: A. Abul-Fadl
Author: Peter Capper
Author: Gerald B. Stringfellow
Author: Tom Kuech
Author: 
Author: B Baliga