Author: A. Abul-Fadl
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
Book Description
The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES).
Current Controlled Liquid Phase Epitaxial Growth of InGaASP.
Author: A. Abul-Fadl
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
Book Description
The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES).
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
Book Description
The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES).
Current Controlled Liquid Phase Epitaxial (CCLPE) Growth and Characterization of InGaAsP(
Author: Lynora Camille Jones
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 112
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 112
Book Description
Current Controlled Liquid Phase Epitaxial Growth and Characterization of InGaAs on (100) Inp Substrates
Author: Murali K. K. Denduluri
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 94
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 94
Book Description
Current Controlled Liquid Phase Epitaxial Growth of GaAs
Author: Salem Omar Issa
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 72
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 72
Book Description
An Investigation of Current Controlled Liquid Phase Epitaxial Growth of III-V Compounds
Author: Ali Abul-Fadl
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 122
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 122
Book Description
Research in Progress
Research in Progress
Author: United States. Army Research Office
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 284
Book Description
Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 284
Book Description
Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).
Scientific and Technical Aerospace Reports
Development of a Liquid Phase Epitaxial Growth System for Fabrication of Indium Phosphide Based Devices
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Current Controlled LPE (Liquid Phase Epitaxy) Growth of Semiconductors
Author: E. K. Stefanakos
Publisher:
ISBN:
Category :
Languages : en
Pages : 58
Book Description
The primary objective of this study was to determine the optimum growth parameters for preparing uniform epitaxial crystalline layers of InAs, InSb, InAsSb and Si using the current controlled liquid phase epitaxy (CCLPE) technique. The original objective was later altered and the effort concentrated on the growth of InAs and Si by CCLPE. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 58
Book Description
The primary objective of this study was to determine the optimum growth parameters for preparing uniform epitaxial crystalline layers of InAs, InSb, InAsSb and Si using the current controlled liquid phase epitaxy (CCLPE) technique. The original objective was later altered and the effort concentrated on the growth of InAs and Si by CCLPE. (Author).