Author: Salem Omar IssaPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 72
Book Description
Current Controlled Liquid Phase Epitaxial Growth of GaAs
Author: Salem Omar IssaPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 72
Book Description
Electric Current Controlled Liquid Phase Epitaxy of GaAs on N+ and Semi-insulating Substrates
Author: David Joseph LawrencePublisher:
ISBN:
Category : Electric currents
Languages : en
Pages : 440
Book Description
Electric-current-controlled Growth and Doping Modulation in GaAs Liquid Phase Epitaxy
Author: David Joseph LawrencePublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 230
Book Description
An Investigation of Current Controlled Liquid Phase Epitaxial Growth of III-V Compounds
Author: Ali Abul-FadlPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 122
Book Description
Current Controlled Liquid Phase Epitaxial Growth and Characterization of InGaAs on (100) Inp Substrates
Author: Murali K. K. DenduluriPublisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 94
Book Description
Liquid Phase Epitaxial Growth of GaAs
Author: Dawnelle Ivy WynneLiquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter CapperPublisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
LIQUID PHASE EPITAXIAL GROWTH OF Ga1) Al As-GaAs HETEROSTRUCTURES.
Author: Rapid Liquid Phase Epitaxial Growth Studies of GaAs
Author: Hendrik J. GerritsenPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 57
Book Description
Current Controlled Liquid Phase Epitaxial Growth of InGaASP.
Author: A. Abul-FadlPublisher:
ISBN:
Category :
Languages : en
Pages : 63
Book Description
The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES).