Author: Murali K. K. Denduluri
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 94
Book Description
Current Controlled Liquid Phase Epitaxial Growth and Characterization of InGaAs on (100) Inp Substrates
Author: Murali K. K. Denduluri
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 94
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 94
Book Description
Growth and Characterization of InGaAsP on (100) InP Substrates by Current Controlled Liquid Phase Epitaxy
Author: Sai Shanker Vallabha
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 102
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 102
Book Description
Current Controlled Liquid Phase Epitaxial (CCLPE) Growth and Characterization of InGaAsP(
Author: Lynora Camille Jones
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 112
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 112
Book Description
The Growth and Characterization of Liquid Phase Epitaxial In0̳.̳5̳3̳Ga0̳.̳4̳7̳As/InP Heterostructures
Author: Peter Schuyler Whitney
Publisher:
ISBN:
Category :
Languages : en
Pages : 482
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 482
Book Description
Development of a Liquid Phase Epitaxial Growth System for Fabrication of Indium Phosphide Based Devices
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Scientific and Technical Aerospace Reports
The Engineering Index Annual
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 2264
Book Description
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 2264
Book Description
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Molecular Beam Epitaxial Growth and Characterization of Mismatched InGaAs and InAlAs Layers on InP
Author: Brian Robert Bennett
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
Book Description
Liquid Phase Epitaxial Growth and Characterization of InAs1-xSb1-x and In1-x GaxSb on 111B InSb Substrates for Infra-red Detectors and Heterojunction Lasers
Author: Jonathan Kwadwo Abrokwah
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 372
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 372
Book Description
Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
Author: Peter Capper
Publisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Publisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.