Author: Lynora Camille JonesPublisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 112
Book Description
Current Controlled Liquid Phase Epitaxial (CCLPE) Growth and Characterization of InGaAsP(
Author: Lynora Camille JonesPublisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 112
Book Description
Current Controlled Liquid Phase Epitaxial Growth and Characterization of InGaAs on (100) Inp Substrates
Author: Murali K. K. DenduluriPublisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 94
Book Description
Current Controlled Liquid Phase Epitaxial Growth of InGaASP.
Author: A. Abul-FadlPublisher:
ISBN:
Category :
Languages : en
Pages : 63
Book Description
The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES).
Zentralblatt für Mineralogie
Author: Current Controlled LPE (Liquid Phase Epitaxy) Growth of Semiconductors
Author: E. K. StefanakosPublisher:
ISBN:
Category :
Languages : en
Pages : 58
Book Description
The primary objective of this study was to determine the optimum growth parameters for preparing uniform epitaxial crystalline layers of InAs, InSb, InAsSb and Si using the current controlled liquid phase epitaxy (CCLPE) technique. The original objective was later altered and the effort concentrated on the growth of InAs and Si by CCLPE. (Author).
The Growth and Characterization of Liquid Phase Epitaxial In0̳.̳5̳3̳Ga0̳.̳4̳7̳As/InP Heterostructures
Author: Peter Schuyler WhitneyPublisher:
ISBN:
Category :
Languages : en
Pages : 482
Book Description
Current Controlled Liquid Phase Epitaxial Growth of GaAs
Author: Salem Omar IssaPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 72
Book Description
Development of a Liquid Phase Epitaxial Growth System for Fabrication of Indium Phosphide Based Devices
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 50
Book Description
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.
Growth and Characterization of Liquid Phase Epitaxial GaP Layers
Author: Yung-Chung KaoPublisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 170
Book Description
An Investigation of Current Controlled Liquid Phase Epitaxial Growth of III-V Compounds
Author: Ali Abul-FadlPublisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 122
Book Description