Crystallographic Finite Element Modeling for Dislocation Generation in Semiconductor Crystals Grown by VGF Process PDF Download

Author: Gary Sheu
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 236

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Author: Xinai Zhu
Publisher:
ISBN:
Category : Dislocations in crystals
Languages : en
Pages : 320

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Author: Qingde Chen
Publisher:
ISBN:
Category : Computational grids
Languages : en
Pages : 133

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Book Description
Silicon carbide as a representative wide band-gap semiconductor has recently received wide attention due to its excellent physical, thermal and especially electrical properties. It becomes a promising material for electronic and optoelectronic device under high-temperature, high-power and high-frequency and intense radiation conditions. During the Silicon Carbide crystal grown by the physical vapor transport process, the temperature gradients induce thermal stresses which is a major cause of the dislocations multiplication. Although large dimension crystal with low dislocation density is required for satisfying the fast development of electronic and optoelectronic device, high dislocation densities always appear in large dimension crystal. Therefore, reducing dislocation density is one of the primary tasks of process optimization. This dissertation aims at developing a transient finite element model based on the Alexander-Haasen model for computing the dislocation densities in a crystal during its growing process. Different key growth parameters such as vi temperature gradient, crystal size will be used to investigate their influence on dislocation multiplications. The acceptable and optimal crystal diameter and temperature gradient to produce the lowest dislocation density in SiC crystal can be obtained through a thorough numerical investigation using this developed finite element model. The results reveal that the dislocation density multiplication in SiC crystal are easily affected by the crystal diameter and the temperature gradient. Generally, during the iterative calculation for SiC growth, the dislocation density multiples very rapidly in the early growth phase and then turns to a relatively slow multiplication or no multiplication at all. The results also show that larger size and higher temperature gradient causes the dislocation density enters rapid multiplication phase sooner and the final dislocation density in the crystal is higher.

Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 860

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Author: Bhushan Vartak
Publisher:
ISBN:
Category :
Languages : en
Pages : 406

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Author: Zhe Leng
Publisher:
ISBN:
Category :
Languages : en
Pages :

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The interaction between the dislocation and the grain boundaries is also incorporated in the model. For the near grain boundary regions, particular consideration and finite element formula is applied to account for the additional activation energy term as well as the geometric compatibility of the grain boundary during dislocation penetration events, both of the energy term and the geometric barrier depend on the grain boundary character. The formulations applied here provide a reasonable methodology to understand how the interactions between dislocation and grain boundary affect the overall mechanical behavior and the microstructure, and quantitative comparisons of predicted geometrically necessary dislocation distributions with the those determined experimentally indicates a reasonable agreement, further analysis also indicates that stress concentration, as well as the dislocation patterning, depends highly on the grain boundary characters.

Author: Hans J. Scheel
Publisher: John Wiley & Sons
ISBN: 0470491108
Category : Science
Languages : en
Pages : 695

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Book Description
This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

Author:
Publisher: Elsevier
ISBN: 0080965148
Category : Science
Languages : en
Pages : 292

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Book Description
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT Review of the CdTe recent developments Fundamental background of many topics clearly introduced and exposed

Author: Victor E. Borisenko
Publisher: Springer Science & Business Media
ISBN: 3642596495
Category : Technology & Engineering
Languages : en
Pages : 362

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Book Description
A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices. A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application, as is information on corresponding thin-film or bulk crystal formation techniques.

Author: Thierry Duffar
Publisher: John Wiley & Sons
ISBN: 1444320211
Category : Technology & Engineering
Languages : en
Pages : 566

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Book Description
Crystal Growth Processes Based on Capillarity closely examines crystal growth technologies, like Czochralski, Floating zone, and Bridgman. The up-to-date reference contains detailed technical and applied information, especially on the difficulty of crystal shape control. Including practical examples and software applications, this book provides both theoretical and experimental sections. Edited by a well-respected academic with over twenty-five years of experience in this field, the text is an excellent resource for professionals in crystal growth as well as for students in understanding the fundamentals and the technology of crystal growth.