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Author: Taekon Kim Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.
Author: Taekon Kim Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.
Author: Nong Moon Hwang Publisher: Springer ISBN: 9401776164 Category : Science Languages : en Pages : 338
Book Description
This book provides a comprehensive introduction to a recently-developed approach to the growth mechanism of thin films and nanostructures via chemical vapour deposition (CVD). Starting from the underlying principles of the low pressure synthesis of diamond films, it is shown that diamond growth occurs not by individual atoms but by charged nanoparticles. This newly-discovered growth mechanism turns out to be general to many CVD and some physical vapor deposition (PVD) processes. This non-classical crystallization is a new paradigm of crystal growth, with active research taking place on growth in solution, especially in biomineralization processes. Established understanding of the growth of thin films and nanostructures is based around processes involving individual atoms or molecules. According to the author’s research over the last two decades, however, the generation of charged gas phase nuclei is shown to be the rule rather than the exception in the CVD process, and charged gas phase nuclei are actively involved in the growth of films or nanostructures. This new understanding is called the theory of charged nanoparticles (TCN). This book describes how the non-classical crystallization mechanism can be applied to the growth of thin films and nanostructures in gas phase synthesis. Based on the author’s graduate lecture course, the book is aimed at senior undergraduate and graduate students and researchers in the field of thin film and nanostructure growth or crystal growth. It is hoped that a new understanding of the growth processes of thin films and nanostructures will reduce trial-and-error in research and in industrial fabrication processes.
Author: Curtis Michael Anderson Publisher: ISBN: 9780549839354 Category : Languages : en Pages : 236
Book Description
This thesis is concerned with the production of silicon thin films for photovoltaic applications. Much research has been carried out to find a stable, more efficient alternative to amorphous silicon, resulting in a number of various amorphous/crystalline mixed-phase film structures with properties superior to amorphous silicon. This thesis work details a completely new approach to mixed-phase film deposition, focusing on the fast crystallization of these films.
Author: Munir H. Nayfeh Publisher: Elsevier ISBN: 044318674X Category : Technology & Engineering Languages : en Pages : 568
Book Description
Integrated Silicon-Metal Systems at the Nanoscale: Applications in Photonics, Quantum Computing, Networking, and Internet is a comprehensive guide to the interaction, materials and functional integration at the nanoscale of the silicon-metal binary system and a variety of emerging and next-generation advanced device applications, from energy and electronics, to sensing, quantum computing and quantum internet networks. The book guides the readers through advanced techniques and etching processes, combining underlying principles, materials science, design, and operation of metal-Si nanodevices. Each chapter focuses on a specific use of integrated metal-silicon nanostructures, including storage and resistive next-generation nano memory and transistors, photo and molecular sensing, harvest and storage device electrodes, phosphor light converters, and hydrogen fuel cells, as well as future application areas, such as spin transistors, quantum computing, hybrid quantum devices, and quantum engineering, networking, and internet. Provides detailed coverage of materials, design and operation of metal-Si nanodevices Offers a step-by-step approach, supported by principles, methods, illustrations and equations Explores a range of cutting-edge emerging applications across electronics, sensing and quantum computing
Author: Lebogang Kotsedi Publisher: ISBN: Category : Amorphous semiconductors Languages : en Pages : 92
Book Description
This study was carried out to crystallize hydrogenerated amorphous silicon thin films using the aluminium induced crystallization technique. This was done to investigate whether there is any lateral crystallization of the amorphous silicon thin film away from the aluminium covered surface of the film.
Author: Cor L. Claeys Publisher: The Electrochemical Society ISBN: 156677652X Category : Crystal growth Languages : en Pages : 370
Book Description
The issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and application of high purity silicon in either bulk or epitaxial form. The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and high resistivity silicon for superior device performances. Device and circuit aspects related to the application of devices fabricated on high resistivity silicon wafers will also be addressed. Special attention will be given to alternative and high-mobility substrates and their material and device aspects.
Author: Taekon Kim
Author: Taekon Kim
Author: Nong Moon Hwang
Author: Curtis Michael Anderson
Author: Munir H. Nayfeh
Author: Lebogang Kotsedi
Author: Theophillus Frederic George Muller
Author: Khalil Hashem Sharif
Author: Cor L. Claeys
Author: Sailakshmi Kolli
Author: John Viatella