Author: Brenda D. KingPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 88
Book Description
Crystallization Kinetics in Amorphous Silicon Thin Films
Author: Brenda D. KingPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 88
Book Description
Kinetics of Crystallization of Selected Amorphous Silicon Films
Author: Franklin David Van GiesonPublisher:
ISBN:
Category : Amorphous substances
Languages : en
Pages : 150
Book Description
Kinetics of Silicide-induced Crystallization of Polycrystalline Thin Film Transistors Fabricated from Amorphous Chemical Vapor Deposition Silicon
Author: Hansuk KimCrystallization of Amorphous Silicon Thin Films Induced by Nanoparticle Seeds
Author: Taekon KimPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.
Crystallization of Amorphous Silicon Thin Films at Elevated Temperatures
Author: Theophillus Frederic George MullerPublisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 270
Book Description
Crystallization Kinetics of Amorphous Tin-doped Indium Oxide Thin Films
Author: Cleva Wan Ow-YangKinetics of Solids Phase Crystallization in Amorphous Silicon
Author: G.L. OlsonKinetics of Solid Phase Crystallization in Amorphous Silicon
Author: G. L. OlsonMetal-Induced Crystallization
Author: Zumin WangPublisher: CRC Press
ISBN: 9814463418
Category : Science
Languages : en
Pages : 317
Book Description
Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon
Amorphous and Heterogeneous Silicon Thin Films - 2000: Volume 609
Author: Robert W. CollinsPublisher:
ISBN:
Category : Science
Languages : en
Pages : 1118
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.