Author: M. Henzler Publisher: ISBN: Category : Languages : en Pages : 33
Book Description
Investigation of steps and other defects at the Si/SiO2 interface by spot profile analysis of LEED. Development of improved defect analysis by use of high resolution LEED systems. Search for correlations of defects with electronic properties of MOS-devices by measurement of defects and electrical properties on the same wafers. The development of the evaluation procedure makes use of a high precision measurement at many different energies: since the spot profile can be separated in a central spike, two Lorentzian type shoulders and a constant background (which is not of interest here), the fraction of the contributions yields valuable informations: The central spike provides the vertical distribution (number of surface levels, distribution over the layers) the shoulders are used to derive the lateral width distribution of terraces and defect areas separately. Keywords: Interface, Defects, MOS devices, Atomic steps, Interface electrical breakdown, Correlation of defects, Electric properties, Silicon, Silicon dioxide. (mjm).
Author: B.E. Deal Publisher: Springer Science & Business Media ISBN: 1489915885 Category : Science Languages : en Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author: Eric Garfunkel Publisher: Springer Science & Business Media ISBN: 9401150087 Category : Technology & Engineering Languages : en Pages : 503
Book Description
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Author: M. Henzler Publisher: ISBN: Category : Languages : en Pages : 32
Book Description
Special MOS-FET's have been prepared to check a correlation between the atomic roughness at the Si/SiO2 interface (as determined by the novel technique of spot profile analysis in the LEED pattern, SPA-LEED) and the electronic mobility in the MOS-device. The transistors have been tested in the temperature range from room temperature down to liquid helium (4 K). Four different sets of transistors with different roughness have been prepared. The roughness has been determinated at large areas with gate oxide on the same chip (without transistor structures, however). Preliminary measurements of mobility show the predicted correlation between roughness and mobility. (Author).
Author: B.E. Deal Publisher: Springer Science & Business Media ISBN: 1489907742 Category : Science Languages : en Pages : 543
Book Description
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Author: J.M. Chamberlain Publisher: Springer Science & Business Media ISBN: 146847412X Category : Science Languages : en Pages : 477
Book Description
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
Author: M. Henzler
Author: B.E. Deal
Author: 
Author: 
Author: Eric Garfunkel
Author: M. Henzler
Author: B.E. Deal
Author: J.M. Chamberlain
Author: Lawrence Berkeley Laboratory. Materials and Molecular Research Division
Author: Jean M. Bennett