Correlation Effects in Hopping Conduction PDF Download

Author: Michael Louis Knotek
Publisher:
ISBN:
Category : Conduction electrons
Languages : en
Pages : 210

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Author: M. L. Knotek
Publisher:
ISBN:
Category :
Languages : en
Pages : 69

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Book Description
The problem of impurity conduction at moderate compensation has been treated using the concept of multi-electron single-phonon transitions. The problem was treated in the region of density, temperature and compensation where two- (or many- ) electron transitions begin to be important. A compensation of 0.5 is used with a temperature range of 1 K to 5 K and an average majority impurity separation of 200 to 600 in germanium. The problem is treated by comparing the transition rates of one- and multielectron transitions of the localized electron system where the one-electron transition defines the critical impedance in a percolation path at low densities and high temperatures. It is found that two and three electron effects may account for the lowering of the 'activation energy' seen experimentally as the density of impurities is raised. Comparison to currently available experimental data is made.

Author: D. C. Glattli
Publisher: Atlantica Séguier Frontières
ISBN: 9782863321591
Category : Cosmology
Languages : en
Pages : 462

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Author: M. Pollak
Publisher: Elsevier
ISBN: 0444600817
Category : Science
Languages : en
Pages : 468

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Book Description
The hopping process, which differs substantially from conventional transport processes in crystals, is the central process in the transport phenomena discussed in this book. Throughout the book the term ``hopping'' is defined as the inelastic tunneling transfer of an electron between two localized electronic states centered at different locations. Such processes do not occur in conventional electronic transport in solids, since localized states are not compatible with the translational symmetry of crystals.The rapid growth of interest in hopping transport has followed in the footsteps of the development of physics of disordered systems during the last three decades. The intense interest in disordered solids can be attributed to the technological potential of the new noncrystalline materials, as well as to new fundamental problems discovered in solid state physics when a crystal is no longer translationally symmetric.In the last decade hopping systems such as organic polymers, biological materials, many oxide glasses, mesoscopic systems, and the new high-temperature superconducting materials in their normal state have attracted much interest. New phenomena investigated recently include interference and coherent scattering in variable range hopping conduction, mesoscopic effects, relaxation processes and thermo-electric power, and thermal conductivity caused by hopping transport. This volume presents the reader with a thorough overview of these recent developments, written by leading experts in the various fields.

Author: B.I. Shklovskii
Publisher: Springer Science & Business Media
ISBN: 3662024039
Category : Science
Languages : en
Pages : 400

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Book Description
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Author: Hellmut Fritzsche
Publisher: World Scientific
ISBN: 9789971509736
Category : Science
Languages : en
Pages : 324

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Book Description
Disordered materials offer new and unexpected insights into the structure of solids and the ways charge carriers move and interact with their environment. The first part of this review volume presents new results and ideas in the subject dealing with the local bonding structure in amorphous and vitreous semiconductors. These include the local bonding structure in chalcogenide glasses containing metal atoms, the interaction of local vibrational modes with their local bonding environment, and new models for the H-bonding configurations.The second part is devoted to questions of low temperature hopping transport and recombination of photocarriers in disordered semiconductors as a function of frequency and at high electric fields. The reviews by leading experts offer different insights and attempt to address problems from the various angles.

Author: M. Pollak
Publisher:
ISBN:
Category :
Languages : en
Pages : 21

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Book Description
Miller and Abrahams' random impedance network is generalized to include non-steady state behavior. The generalized network has the property that for dc it is equivalent to the MA network, and for high frequencies it corresponds to the theory of Pollak and Geballe. In addition to Miller and Abrahams' resistances Zij between states i and j the generalized network includes capacitances Ci connected between the i terminal of Zij and one terminal of a generator Vi. The other terminal of Vi is connected to a 'ground' common to all the generators. The capacitances are related to the equilibrium occupation probability of site i, and the generators are related in a simple way to the imposed field. The network can also be extended to include electronic correlation effects by the inclusion of feedback elements.

Author: Hellmut Fritzsche
Publisher: World Scientific
ISBN: 9814522074
Category :
Languages : en
Pages : 556

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Book Description
This review volume contains articles on the recent developments, new ideas, as well as controversial issues dealing with the general phenomena of hopping transport in disordered systems. Examples of hopping systems of current interest are polymers and biological materials, mesoscopic systems, two- and one-dimensional systems such as MOSFETs, semiconductors near the metal-nonmetal transition, and the new high temperature superconducting materials (in their normal state). The fundamental problems addressed include effects of static and dynamic interactions with phonons, Coulomb interaction, new magnetic effects due to coherent scattering, effects of high electric fields, and relaxation phenomena.

Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572

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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Author: Karl W. Böer
Publisher: Springer Nature
ISBN: 3031182863
Category : Technology & Engineering
Languages : en
Pages : 1408

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Book Description
This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.