Conductance in Model Mesoscopic Structures PDF Download

Author: Thomas Ouchterlony
Publisher:
ISBN: 9789172192171
Category :
Languages : en
Pages : 57

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Author: Geoffrey Grinstein
Publisher: World Scientific
ISBN: 9814513601
Category : Science
Languages : en
Pages : 270

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Book Description
This volume collects several in-depth articles giving lucid discussions on new developments in statistical and condensed matter physics. Many, though not all, contributors had been in touch with the late S-K Ma. Written by some of the world's experts and originators of new ideas in the field, this book is a must for all researchers in theoretical physics. Most of the articles should be accessible to diligent graduate students and experienced readers will gain from the wealth of materials contained herein.

Author: Supriyo Datta
Publisher: Cambridge University Press
ISBN: 1139643010
Category : Science
Languages : en
Pages : 398

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Book Description
Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.

Author: Susumu Namba
Publisher: Springer Science & Business Media
ISBN: 4431669221
Category : Science
Languages : en
Pages : 477

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Book Description
The International Symposium on the Science and Technology of Mesoscopic Structures was held at Shin-Kohkaido in Nara from November 6-8, 1991. The symposium was sponsored by the International Institute for Advanced Study and partly by Nara Prefecture, Nara City, Nara Convention Bureau, and the Ministry of Education, Science and Culture of Japan, as well as industrial organizations. We would like to acknowledge the support of the symposium by these or ganizations. The scope of the symposium was planned by the organizing committee to cover outstanding contributors in the fields of (1) ballistic transport, (2) electron wave guides and interference effects, (3) quantum confinement effects, (4) tunneling phenomena, (5) optical nonlinearity, and (6) fabrication technology of meso scopic structures. Twenty-six invited speakers were selected from the United States, Europe, and Japan. In addition twenty-four contributed papers were accepted for presentation at the poster session. These papers are included in the proceedings. We are grateful to the organizing committee, Ms. Y oshiko Kusaki of the Inter national Institute for Advanced Study for the secretarial service, and Dr. Nobuya Mori, Osaka University, for his scientific cooperation. Thanks are also due to the authors and the participants for their contributions to a successful symposium.

Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
ISBN: 3642105866
Category : Science
Languages : en
Pages : 590

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Book Description
This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.

Author: Thierry Martin
Publisher: Atlantica Séguier Frontières
ISBN: 9782863322017
Category : Condensed matter
Languages : en
Pages : 574

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Author: David Sánchez
Publisher: MDPI
ISBN: 3039433660
Category : Mathematics
Languages : en
Pages : 426

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Book Description
Mesoscopic physics deals with systems larger than single atoms but small enough to retain their quantum properties. The possibility to create and manipulate conductors of the nanometer scale has given birth to a set of phenomena that have revolutionized physics: quantum Hall effects, persistent currents, weak localization, Coulomb blockade, etc. This Special Issue tackles the latest developments in the field. Contributors discuss time-dependent transport, quantum pumping, nanoscale heat engines and motors, molecular junctions, electron–electron correlations in confined systems, quantum thermo-electrics and current fluctuations. The works included herein represent an up-to-date account of exciting research with a broad impact in both fundamental and applied topics.

Author: V. A. Sablikov
Publisher:
ISBN:
Category :
Languages : en
Pages : 4

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Book Description
Electron transport in a quantun wire structure is investigated with comprehensive account of Coulomb interaction which includes both the direct interaction of electrons with each other and their interaction via the image charges induced on the leads. The Coulomb interaction is shown to change significantly the electron density distribution along the wiw as compared with Luttinger liquid n%odeL Under DC conditions, it causes the charge density to strongly increase near to the contacts with the leads. Together with a proximity effect, this may be a reason of nonuniversal conductance quantization. AC conductance shows a resonant behavior caused by charge waves. The charge wave velocity is renormalized due to the Coulomb interaction in a frequency-dependent manner the velocity increases noticably with decreasing the frequency. In the nonlinear regime, the conductance is significantly affected by the charge stored in the wire.

Author: Tsuneya Ando
Publisher: Springer Science & Business Media
ISBN: 3642719767
Category : Technology & Engineering
Languages : en
Pages : 293

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Book Description
Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

Author: N.E. Hurt
Publisher: Springer Science & Business Media
ISBN: 9780792344599
Category : Mathematics
Languages : en
Pages : 362

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Book Description
4. 2 Variance of Quantum Matrix Elements. 125 4. 3 Berry's Trick and the Hyperbolic Case 126 4. 4 Nonhyperbolic Case . . . . . . . 128 4. 5 Random Matrix Theory . . . . . 128 4. 6 Baker's Map and Other Systems 129 4. 7 Appendix: Baker's Map . . . . . 129 5 Error Terms 133 5. 1 Introduction. . . . . . . . . . . . . . . . . . . . . . . 133 5. 2 The Riemann Zeta Function in Periodic Orbit Theory 135 5. 3 Form Factor for Primes . . . . . . . . . . . . . . . . . 137 5. 4 Error Terms in Periodic Orbit Theory: Co-compact Case. 138 5. 5 Binary Quadratic Forms as a Model . . . . . . . . . . . . 139 6 Co-Finite Model for Quantum Chaology 141 6. 1 Introduction. . . . . . . . 141 6. 2 Co-finite Models . . . . . 141 6. 3 Geodesic Triangle Spaces 144 6. 4 L-Functions. . . . . . . . 145 6. 5 Zelditch's Prime Geodesic Theorem. 146 6. 6 Zelditch's Pseudo Differential Operators 147 6. 7 Weyl's Law Generalized 148 6. 8 Equidistribution Theory . . . . . . . . . 150 7 Landau Levels and L-Functions 153 7. 1 Introduction. . . . . . . . . . . . . . . . . . . . . . . 153 7. 2 Landau Model: Mechanics on the Plane and Sphere. 153 7. 3 Landau Model: Mechanics on the Half-Plane 155 7. 4 Selberg's Spectral Theorem . . . . . . . . . . . 157 7. 5 Pseudo Billiards . . . . . . . . . . . . . . . . . 158 7. 6 Landau Levels on a Compact Riemann Surface 159 7. 7 Automorphic Forms . . . . . 160 7. 8 Maass-Selberg Trace Formula 162 7. 9 Degeneracy by Selberg. . . . 163 7. 10 Hecke Operators . . . . . . . 163 7. 11 Selberg Trace Formula for Hecke Operators 167 7. 12 Eigenvalue Statistics on X . . . . 169 7. 13 Mesoscopic Devices. . . . . . . . 170 7. 14 Hall Conductance on Leaky Tori 170 7.