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Author: Chinmay Kumar Maiti Publisher: World Scientific ISBN: 9814713090 Category : Technology & Engineering Languages : en Pages : 465
Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Author: Chinmay Kumar Maiti Publisher: World Scientific ISBN: 9814713090 Category : Technology & Engineering Languages : en Pages : 465
Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Author: Trupti Ranjan Lenka Publisher: Springer Nature ISBN: 9811921652 Category : Technology & Engineering Languages : en Pages : 246
Book Description
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Author: Chinmay K. Maiti Publisher: CRC Press ISBN: 1000404935 Category : Science Languages : en Pages : 275
Book Description
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Author: Chinmay K. Maiti Publisher: CRC Press ISBN: 9814745529 Category : Science Languages : en Pages : 438
Book Description
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
Author: Chinmay K. Maiti Publisher: CRC Press ISBN: 1000638111 Category : Technology & Engineering Languages : en Pages : 314
Book Description
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Author: Svetlana N. Yanushkevich Publisher: Springer Nature ISBN: 3031798554 Category : Technology & Engineering Languages : en Pages : 132
Book Description
Noise abatement is the key problem of small-scaled circuit design. New computational paradigms are needed -- as these circuits shrink, they become very vulnerable to noise and soft errors. In this lecture, we present a probabilistic computation framework for improving the resiliency of logic gates and circuits under random conditions induced by voltage or current fluctuation. Among many probabilistic techniques for modeling such devices, only a few models satisfy the requirements of efficient hardware implementation -- specifically, Boltzman machines and Markov Random Field (MRF) models. These models have similar built-in noise-immunity characteristics based on feedback mechanisms. In probabilistic models, the values 0 and 1 of logic functions are replaced by degrees of beliefs that these values occur. An appropriate metric for degree of belief is probability. We discuss various approaches for noise-resilient logic gate design, and propose a novel design taxonomy based on implementation of the MRF model by a new type of binary decision diagram (BDD), called a cyclic BDD. In this approach, logic gates and circuits are designed using 2-to-1 bi-directional switches. Such circuits are often modeled using Shannon expansions with the corresponding graph-based implementation, BDDs. Simulation experiments are reported to show the noise immunity of the proposed structures. Audiences who may benefit from this lecture include graduate students taking classes on advanced computing device design, and academic and industrial researchers. Table of Contents: Introduction to probabilistic computation models / Nanoscale circuits and fluctuation problems / Estimators and Metrics / MRF Models of Logic Gates / Neuromorphic models / Noise-tolerance via error correcting / Conclusion and future work
Author: Svetlana N. Yanushkevich Publisher: CRC Press ISBN: 1351836382 Category : Technology & Engineering Languages : en Pages : 960
Book Description
Decision diagram (DD) techniques are very popular in the electronic design automation (EDA) of integrated circuits, and for good reason. They can accurately simulate logic design, can show where to make reductions in complexity, and can be easily modified to model different scenarios. Presenting DD techniques from an applied perspective, Decision Diagram Techniques for Micro- and Nanoelectronic Design Handbook provides a comprehensive, up-to-date collection of DD techniques. Experts with more than forty years of combined experience in both industrial and academic settings demonstrate how to apply the techniques to full advantage with more than 400 examples and illustrations. Beginning with the fundamental theory, data structures, and logic underlying DD techniques, they explore a breadth of topics from arithmetic and word-level representations to spectral techniques and event-driven analysis. The book also includes abundant references to more detailed information and additional applications. Decision Diagram Techniques for Micro- and Nanoelectronic Design Handbook collects the theory, methods, and practical knowledge necessary to design more advanced circuits and places it at your fingertips in a single, concise reference.
Author: Ting Li Publisher: Springer ISBN: 9783319845005 Category : Technology & Engineering Languages : en Pages : 521
Book Description
This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things. The authors focus on how the nanoscale structures interact with the electrical and/or optical performance, how to find optimal solutions to achieve the best outcome, how these apparatus can be designed via models and simulations, how to improve reliability, and what are the possible challenges and roadblocks moving forward.
Author: Arun Kumar Singh Publisher: CRC Press ISBN: 1000464989 Category : Technology & Engineering Languages : en Pages : 353
Book Description
Nanoelectronic Devices for Hardware and Software Security has comprehensive coverage of the principles, basic concepts, structure, modeling, practices, and circuit applications of nanoelectronics in hardware/software security. It also covers the future research directions in this domain. In this evolving era, nanotechnology is converting semiconductor devices dimensions from micron technology to nanotechnology. Nanoelectronics would be the key enabler for innovation in nanoscale devices, circuits, and systems. The motive for this research book is to provide relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology for hardware/software security. There are numerous challenges in the development of models for nanoscale devices (e.g., FinFET, gate-all-around devices, TFET, etc.), short channel effects, fringing effects, high leakage current, and power dissipation, among others. This book will help to identify areas where there are challenges and apply nanodevice and circuit techniques to address hardware/software security issues.