Compact Modeling of Double-Gate MOSFETs PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Compact Modeling of Double-Gate MOSFETs PDF full book. Access full book title Compact Modeling of Double-Gate MOSFETs by Huaxin Lu. Download full books in PDF and EPUB format.
Author: Huaxin Lu Publisher: ISBN: Category : Languages : en Pages : 143
Book Description
Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects. Currently, much research effort is devoted to the development of DG MOSFETs. This dissertation focuses on the compact modeling of DG MOSFETs, aiming to extract the physics of DG MOSFETs and provide a tool for simulating DG MOSFET circuits. We start from the basic Poisson's equation and current continuity equation to rigorously derive the long-channel drain current model without the charge sheet approximation. The model is based on an analytical solution to the potential distribution at any point in the DG MOSFET. It employs one single equation to cover all the operation regions: linear, saturation, and subthreshold, continuously with no fitting parameter. Volume inversion, a non-charge-sheet phenomenon in symmetric DG MOSFETs, is accurately captured by the model. For AC and transient simulations, analytical charge and capacitance models are developed. Both symmetric and asymmetric DG MOSFET models are verified by extensive two dimensional numerical simulations. For small-geometry devices, compact models of the physical phenomena such as short channel effects are developed. In the development of the compact models, special attention is paid to ensure the model is symmetric and continuous in all the operation regions. Quantum effect is also incorporated in the long channel core model. As body doping may be needed to adjust the threshold voltage, we also studied the body doping effect on DG MOSFET and concluded that lightly doped DG MOSFETs can be modeled by adding a threshold voltage shift to the undoped DG MOSFET model. The model has been implemented into SPICE3 and Verilog-A platforms so that it can be used by circuit designers. In the implementation, Newton method is used for solving an implicit equation in the calculation of drain current. We also calibrated the model with respect to the published hardware data to affirm its consistency with the experimental I-V curves. Finally, the model has been released in public domain http://taur.ucsd.edu/~hlu for circuit simulation.
Author: Huaxin Lu Publisher: ISBN: Category : Languages : en Pages : 143
Book Description
Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects. Currently, much research effort is devoted to the development of DG MOSFETs. This dissertation focuses on the compact modeling of DG MOSFETs, aiming to extract the physics of DG MOSFETs and provide a tool for simulating DG MOSFET circuits. We start from the basic Poisson's equation and current continuity equation to rigorously derive the long-channel drain current model without the charge sheet approximation. The model is based on an analytical solution to the potential distribution at any point in the DG MOSFET. It employs one single equation to cover all the operation regions: linear, saturation, and subthreshold, continuously with no fitting parameter. Volume inversion, a non-charge-sheet phenomenon in symmetric DG MOSFETs, is accurately captured by the model. For AC and transient simulations, analytical charge and capacitance models are developed. Both symmetric and asymmetric DG MOSFET models are verified by extensive two dimensional numerical simulations. For small-geometry devices, compact models of the physical phenomena such as short channel effects are developed. In the development of the compact models, special attention is paid to ensure the model is symmetric and continuous in all the operation regions. Quantum effect is also incorporated in the long channel core model. As body doping may be needed to adjust the threshold voltage, we also studied the body doping effect on DG MOSFET and concluded that lightly doped DG MOSFETs can be modeled by adding a threshold voltage shift to the undoped DG MOSFET model. The model has been implemented into SPICE3 and Verilog-A platforms so that it can be used by circuit designers. In the implementation, Newton method is used for solving an implicit equation in the calculation of drain current. We also calibrated the model with respect to the published hardware data to affirm its consistency with the experimental I-V curves. Finally, the model has been released in public domain http://taur.ucsd.edu/~hlu for circuit simulation.
Author: Wei Wang Publisher: ISBN: 9781109906974 Category : Languages : en Pages : 145
Book Description
As CMOS scales down to the limits imposed by oxide tunneling and voltage non-scaling, double-gate (DG) MOSFET has become a subject of intense VLSI research. In this dissertation, quantum effects were investigated in both long channel and short channel Double-Gate MOSFETs.
Author: Amara Amara Publisher: Springer Science & Business Media ISBN: 1402093411 Category : Technology & Engineering Languages : en Pages : 215
Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Author: Neha Agarwal Publisher: LAP Lambert Academic Publishing ISBN: 9783659246876 Category : Languages : en Pages : 56
Book Description
Double gate MOSFET is widely used for sub-50nm technology of transistor design .They have immunity to short channel effects, reduced leakage current and high scaling potential. The single gate Silicon-on-insulator (SOI) devices give improved circuit speed and power consumption .But as the transistor size is reduced the close proximity between source and drain reduces the ability of the gate electrode to control the flow of current and potential distribution in the channel. To reduce SCE we need increase gate to channel coupling with respect to source/drain to channel coupling. This book presents the compact modeling of long channel undoped and doped symmetric double-gate MOSFET. The formulation starts with the solution of Poisson's equation which is then coupled to the Pao-Sah current equation to obtain the analytical drain-current model in terms of carrier concentration. The performance analysis of both the doped and undoped body symmetric DGMOS is done by using the model . Comparison of the two types of DGMOS is also done on the basis their electrical characteristics.
Author: Gennady Gildenblat Publisher: Springer Science & Business Media ISBN: 9048186145 Category : Technology & Engineering Languages : en Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Muthupandian Cheralathan Publisher: ISBN: Category : Languages : en Pages : 0
Book Description
En aquesta tesi hem desenvolupat models compactes que incorporen un model de transport hidrodinàmic adaptat a multi-gate (principalment double-gate (DG) and surrounding-gate (SRG) MOSFETs a partir de models unificats de control de càrrega I del potencial de superfície, obtinguts de l'equació de Poisson. Tots aquests dispositius es modelitzen seguint un esquema semblant. El corrent i càrregues totals s'escriuen en funció de les densitats de càrrega mòbil per unitat d'àrea als extrems drenador i font del canal. Els efectes de canal curt i quàntics també s'inclouen en el model compacte desenvolupat. El model desenvolupat mostra un bon acord amb simulacions numèriques 2D i 3D en tots els règims d'operació. El model desenvolupat s'implementa i testeja al simulador de circuits SMASH per a l'anàlisi dels comportaments DC i transitori de circuits CMOS.
Author: Muthupandian Cheralathan Publisher: ISBN: Category : Languages : en Pages : 149
Book Description
En aquesta tesi hem desenvolupat models compactes que incorporen un model de transport hidrodinàmic adaptat a multi-gate (principalment double-gate (DG) and surrounding-gate (SRG) MOSFETs a partir de models unificats de control de càrrega I del potencial de superfície, obtinguts de l'equació de Poisson. Tots aquests dispositius es modelitzen seguint un esquema semblant. El corrent i càrregues totals s'escriuen en funció de les densitats de càrrega mòbil per unitat d'àrea als extrems drenador i font del canal. Els efectes de canal curt i quàntics també s'inclouen en el model compacte desenvolupat. El model desenvolupat mostra un bon acord amb simulacions numèriques 2D i 3D en tots els règims d'operació. El model desenvolupat s'implementa i testeja al simulador de circuits SMASH per a l'anàlisi dels comportaments DC i transitori de circuits CMOS.
Author: A. B. Bhattacharyya Publisher: John Wiley & Sons ISBN: 0470823437 Category : Technology & Engineering Languages : en Pages : 512
Book Description
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
Author: Bo Yu Publisher: ISBN: Category : Languages : en Pages : 163
Book Description
As bulk CMOS scaling is approaching the limit that is imposed by gate oxide tunneling, body doping, band-to-band tunneling, etc., non-classical MOSFET is becoming an intense subject of very large-scale integration (VLSI) research. Among a variety of non-classical MOSFETs, multiple-gate (MG) MOSFETs which are still based on Si have been proposed to scale down CMOS technology more aggressively because of better control of short-channel effects (SCEs), whereas novel MOSFETs utilizing III-V materials instead of Si are suggested to achieve CMOS performance breakthrough even without scaling down too aggressively due to the large mobility of mobile carriers. This dissertation focuses on the design and modeling of these two categories of non-classical MOSFETs. Actually, many different types of Si-based MG MOSFETs have been designed and even fabricated in the last two decades, including double-gate (DG) MOSFETs, surrounding-gate (SG) MOSFETs, quadruple-gate (QG) MOSFETs, triple-gate (TG) MOSFETs, Pi-gate MOSFETs, Omega-gate MOSFETs, and so on. Although the design work has been pretty much done, specific compact models for these MG MOSFETs other than BSIM, PSP, and HiSIM are in urgent need, because the charge sheet approximation is no longer appropriate for MG MOSFETs due to the so-called "volume inversion" effect. In this dissertation, we will first introduce the complete non-charge-sheet based analytic models of drain current, terminal charges and capacitance coefficients for long channel symmetric DG and SG MOSFETs. The DG and SG models will be generalized to a unified analytic drain current model for all kinds of MG MOSFETs, with some non-trivial yet reasonable approximations. Efforts will also be focused on making the physics-based model more versatile and computationally efficient. On the contrary, the research on III-V MOSFETs is still in the primary phase. Compact modeling for III-V MOSFETs is not being considered in the current stage because the device technology itself is far away from maturity, and the interest of this dissertation is in device design and basic physical modeling. With SCEs treated as the top-drawer consideration, a baseline device design of III-V MOSFET for sub-22nm scaling is proposed based on the thin-BOX-SOI-like structure. Physical modeling of capacitances in III-V MOSFETs has also been carried out to gain a more clear picture of capacitance degradation due to small density-of-states (DOS).
Author: Huaxin Lu
Author: Huaxin Lu
Author: Wei Wang
Author: Amara Amara
Author: Neha Agarwal
Author: Gennady Gildenblat
Author: Muthupandian Cheralathan
Author: Muthupandian Cheralathan
Author: Meng-Hsueh Chiang
Author: A. B. Bhattacharyya
Author: Bo Yu