Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Compact Modeling PDF full book. Access full book title Compact Modeling by Gennady Gildenblat. Download full books in PDF and EPUB format.
Author: Gennady Gildenblat Publisher: Springer Science & Business Media ISBN: 9048186145 Category : Technology & Engineering Languages : en Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Gennady Gildenblat Publisher: Springer Science & Business Media ISBN: 9048186145 Category : Technology & Engineering Languages : en Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Samar K. Saha Publisher: CRC Press ISBN: 1351831070 Category : Technology & Engineering Languages : en Pages : 385
Book Description
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Author: Wladyslaw Grabinski Publisher: Springer Science & Business Media ISBN: 9048130468 Category : Technology & Engineering Languages : en Pages : 210
Book Description
Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Author: Paolo Pavan Publisher: Springer Science & Business Media ISBN: 1402026137 Category : Computers Languages : en Pages : 139
Book Description
Floating Gate Devices: Operation and Compact Modeling focuses on standard operations and compact modeling of memory devices based on Floating Gate architecture. Floating Gate devices are the building blocks of Flash, EPROM, EEPROM memories. Flash memories, which are the most versatile nonvolatile memories, are widely used to store code (BIOS, Communication protocol, Identification code,) and data (solid-state Hard Disks, Flash cards for digital cameras,). The reader, who deals with Floating Gate memory devices at different levels - from test-structures to complex circuit design - will find an essential explanation on device physics and technology, and also circuit issues which must be fully understood while developing a new device. Device engineers will use this book to find simplified models to design new process steps or new architectures. Circuit designers will find the basic theory to understand the use of compact models to validate circuits against process variations and to evaluate the impact of parameter variations on circuit performances. Floating Gate Devices: Operation and Compact Modeling is meant to be a basic tool for designing the next generation of memory devices based on FG technologies.
Author: Michael Schr”ter Publisher: World Scientific ISBN: 981427321X Category : Technology & Engineering Languages : en Pages : 753
Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author: A. B. Bhattacharyya Publisher: John Wiley & Sons ISBN: 0470823437 Category : Technology & Engineering Languages : en Pages : 512
Book Description
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
Author: Henk C. de Graaff Publisher: Springer Science & Business Media ISBN: 3709190436 Category : Computers Languages : en Pages : 367
Book Description
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
Author: Chenming Hu Publisher: Woodhead Publishing ISBN: 0081024029 Category : Technology & Engineering Languages : en Pages : 258
Book Description
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model
Author: Yabin Sun Publisher: Springer ISBN: 9811046123 Category : Technology & Engineering Languages : en Pages : 168
Book Description
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Author: Carlos Galup-Montoro Publisher: World Scientific ISBN: 9812568107 Category : Technology & Engineering Languages : en Pages : 445
Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Gennady Gildenblat
Author: Gennady Gildenblat
Author: Samar K. Saha
Author: Wladyslaw Grabinski
Author: Paolo Pavan
Author: Michael Schr”ter
Author: A. B. Bhattacharyya
Author: Henk C. de Graaff
Author: Chenming Hu
Author: Yabin Sun
Author: Carlos Galup-Montoro