Colloidal Quantum Dot Field-effect Transistors PDF Download

Author: Artem Gennadiiovych Shulga
Publisher:
ISBN: 9789403414799
Category :
Languages : en
Pages :

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Author: Peng Yu
Publisher: Springer Nature
ISBN: 3030358135
Category : Technology & Engineering
Languages : en
Pages : 329

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Book Description
This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.

Author: Gerasimos Konstantatos
Publisher: Cambridge University Press
ISBN: 0521198267
Category : Science
Languages : en
Pages : 329

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Book Description
Captures the most up-to-date research in the field, written in an accessible style by the world's leading experts.

Author: Zhiming M. Wang
Publisher: Springer Science & Business Media
ISBN: 1461435706
Category : Science
Languages : en
Pages : 375

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Book Description
Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. Quantum Dot Devices is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source.

Author: Siva G. Narendra
Publisher: Springer Science & Business Media
ISBN: 9780387281339
Category : Technology & Engineering
Languages : en
Pages : 308

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Book Description
Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.

Author: Jason Tolentino
Publisher:
ISBN: 9781339124421
Category :
Languages : en
Pages :

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Book Description
Colloidal quantum dot (CQD) solids represent a class of materials that allows one to control the optical and electronic properties due to their unique size-dependent properties with special electronic and optoelectronic device applications. Unfortunately, integration of these materials into high performing devices such as transistors and solar cells have been challenging due to: 1) uncontrolled environmental stability 2) lack of accurate control over charge carrier type and mobility 3) poor device operational stability and 4) limited experimental methods to probe the density of states in these materials in order to understand fundamental electronic and optical properties. In this thesis, we demonstrate the ability to stabilize and improve the environmental stability of these materials with amorphous Al2O3 (a-alumina). More importantly, we can accurately engineer the carrier type and mobility by varying the thickness of the alumina. Through a combination of small, compact inorganic ligands and the ability to passivate surface electronic traps, air-stable, high electron mobility PbSe QD field-effect transistors (FET) are obtained. We then show that we can also improve transistor device operational stability through an in-vacuo ligand exchange with H2S gas introduced in an atomic layer deposition (ALD) chamber. We find that this method is universal when volatile ligands are used. Possible mechanisms for device instability will be discussed such as proton migration and trap passivation. Using an optimized film preparation, this work will be the first demonstration of a QD FET with an electron mobility greater than 10 cm2 V-1 s-1 that is also operationally stable. Finally, we introduce a unique transmission spectroscopy technique of field-effect transistors to electrostatically probe induced charge carriers in PbSe QD films. With this technique we resolve occupation of quantized states of the quantum dots rather than the matrix or interfacial states. This platform is used to test fundamental transport models as it relates to disordered semiconductors such as QDs. From this technique, we can draw important conclusions about charge transport at room temperature. This novel experimental method can be extended to other experimental setups such as photoluminescence and photoconductivity in order to understand how to rationally improve the electronic properties of QD films.

Author: Xin Tong
Publisher: Springer Nature
ISBN: 3030742709
Category : Technology & Engineering
Languages : en
Pages : 319

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Book Description
This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.

Author: Vladimir Lesnyak
Publisher: Frontiers Media SA
ISBN: 2889632695
Category :
Languages : en
Pages : 110

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Author: Inamuddin
Publisher: Materials Research Forum LLC
ISBN: 1644901242
Category : Technology & Engineering
Languages : en
Pages : 360

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Book Description
The book provides a thorough survey of current research in quantum dots synthesis, properties, and applications. The unique properties of these new nanomaterials offer multifunctional applications in such fields as photovoltaics, light-emitting diodes, field-effect transistors, lasers, photodetectors, solar cells, biomedical diagnostics and quantum computing. Keywords: Quantum Dots (QD), Photovoltaics, Light-emitting Diodes, Field-effect Transistors, Lasers, Photodetectors, Solar Cells, Biomedical Diagnostics, Quantum Computing, QD Synthesis, Carbon QDs, Graphene QDs, QD Sensors, Supercapacitors, Magnetic Quantum Dots, Cellular/Molecular Separation, Chromatographic Separation Column, Photostability, Luminescence of Carbon QDs, QD Materials for Water Treatment, Semiconductor Quantum Dots, QD Drug Delivery, Antibacterial Quantum Dots.

Author: Supriya Karmakar
Publisher: Springer Science & Business Media
ISBN: 8132216350
Category : Technology & Engineering
Languages : en
Pages : 147

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Book Description
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.