Author: Khaled R. HelouePublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Circuit Timing and Leakage Analysis in the Presence of Variability
Modeling of Deterministic Within-die Variation in Timing Analysis, Leakage Current Analysis, and Delay Fault Diagnosis
Author: Munkang ChoiPublisher:
ISBN: 9780549002116
Category :
Languages : en
Pages : 141
Book Description
To determine how these within-die variations impact circuit performance, a new analysis tool is required. Thus a methodology has been proposed to involve layout-dependent within-die variations in static timing analysis. The methodology combines a set of scripts and commercial tools to analyze a full chip. The tool has been applied to analyze delay of ISCAS85 benchmark circuits in the presence of imperfect lithography and CMP variation.
Circuit Timing and Leakage Power Analysis Under Process Variations
Author: Hongliang ChangStatistical Performance Analysis and Modeling Techniques for Nanometer VLSI Designs
Author: Ruijing ShenPublisher: Springer Science & Business Media
ISBN: 1461407885
Category : Technology & Engineering
Languages : en
Pages : 326
Book Description
Since process variation and chip performance uncertainties have become more pronounced as technologies scale down into the nanometer regime, accurate and efficient modeling or characterization of variations from the device to the architecture level have become imperative for the successful design of VLSI chips. This book provides readers with tools for variation-aware design methodologies and computer-aided design (CAD) of VLSI systems, in the presence of process variations at the nanometer scale. It presents the latest developments for modeling and analysis, with a focus on statistical interconnect modeling, statistical parasitic extractions, statistical full-chip leakage and dynamic power analysis considering spatial correlations, statistical analysis and modeling for large global interconnects and analog/mixed-signal circuits. Provides readers with timely, systematic and comprehensive treatments of statistical modeling and analysis of VLSI systems with a focus on interconnects, on-chip power grids and clock networks, and analog/mixed-signal circuits; Helps chip designers understand the potential and limitations of their design tools, improving their design productivity; Presents analysis of each algorithm with practical applications in the context of real circuit design; Includes numerical examples for the quantitative analysis and evaluation of algorithms presented. Provides readers with timely, systematic and comprehensive treatments of statistical modeling and analysis of VLSI systems with a focus on interconnects, on-chip power grids and clock networks, and analog/mixed-signal circuits; Helps chip designers understand the potential and limitations of their design tools, improving their design productivity; Presents analysis of each algorithm with practical applications in the context of real circuit design; Includes numerical examples for the quantitative analysis and evaluation of algorithms presented.
Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation
Author: Nadine AzemardPublisher: Springer
ISBN: 3540744428
Category : Computers
Languages : en
Pages : 596
Book Description
This volume features the refereed proceedings of the 17th International Workshop on Power and Timing Modeling, Optimization and Simulation. Papers cover high level design, low power design techniques, low power analog circuits, statistical static timing analysis, power modeling and optimization, low power routing optimization, security and asynchronous design, low power applications, modeling and optimization, and more.
Closing the Power Gap between ASIC & Custom
Author: David ChinneryPublisher: Springer Science & Business Media
ISBN: 0387689532
Category : Technology & Engineering
Languages : en
Pages : 392
Book Description
Explains how to use low power design in an automated design flow, and examine the design time and performance trade-offs Includes the latest tools and techniques for low power design applied in an ASIC design flow Focuses on low power in an automated design methodology, a much neglected area
Proceedings
Author: Publisher:
ISBN:
Category : Low voltage integrated circuits
Languages : en
Pages : 428
Book Description
Stochastic Process Variation in Deep-Submicron CMOS
Author: Amir ZjajoPublisher: Springer Science & Business Media
ISBN: 9400777817
Category : Technology & Engineering
Languages : en
Pages : 207
Book Description
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.
ISLPED'04
Author: Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 420
Book Description
"IEEE Catalog Number: 04TH8758"--T.p. verso.
Statistical Leakage Estimation Using Artificial Neural Networks
Author: Mithun Muralidharan NairPublisher:
ISBN:
Category :
Languages : en
Pages : 108
Book Description
Present day integrated circuit designs have become very densely packed with smaller devices. The scaling down of technology has increased the significance of modeling the effect of process variations. Increasing leakage power consumption is another factor that the circuit designers are concerned about, in the smaller technology nodes. This continuous reduction in size of the devices has made engineers to give high importance to the effect of process variations in these designs. The effect of variation can be very drastic when variations affect the functionality of the chip. There could be a finite probability that the chip is functional in the presence of variations but does not meet performance and/or power consumption requirements. The modern day chip designing is very much oriented towards high performance and low power designs. In this scenario, an adverse effect from process variations can prove counter productive for the designer. A good design methodology should be able to predict and address these adverse effects at early design stages. So it is the need of the hour to have techniques that could model the effect of process variations from synthesis to post routing stages. In this thesis we propose a methodology that could accurately estimate the leakage in the presence of variations after synthesis stage. Since we are addressing the issue at pre-layout stage, we have given importance to the variations in device dimensions and threshold voltage. The methodology starts from the RTL description of a design. This design is synthesized to a netlist of Standard Cells. We have used all the standard cell definitions and characterized power and timing values from Synopys 90nm EDK. This netlist is used for our experiments. The core of this method is the artificial neural network models for standard cell leakage. These models are generated for a wide range of cells in the standard cell library and in turn are used in a tool that produces a Statistical Leakage estimate in the presence of process variations. The standard methodology for statistical leakage analysis in the presence of variations is Monte Carlo simulations in HSPICE. The conventional Statistical Leakage estimation is done using Monte Carlo simulations for smaller circuits. For larger benchmarks one of the method used for Statistical Leakage estimation is Wilkinson's approach. This method is applied on standard circuit benchmarks and a comparison has been made with the conventional Statistical Leakage estimation methodologies.