Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications
Author: Thermal Metalorganic Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications
Author: Chemical Vapor Deposition of Thin Films for Diffusion Barrier Applications
Author: Omar BchirPublisher:
ISBN: 9780530008301
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
Abstract: PhD Dissertation: MOCVD of WNx Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Chemical Vapor Deposition of Thin Films for Diffusion Barrier Applications" by Omar James Bchir, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Chemical Vapor Deposition of Thin Films for Diffusion Barrier Applications
Author: Omar James BchirChemical Vapor Deposition
Author: S NerallaPublisher: BoD – Books on Demand
ISBN: 9535125729
Category : Science
Languages : en
Pages : 292
Book Description
This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.
Chemical Vapor Deposition of Ternary Refractory Nitrides for Diffusion Barrier Applications
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
As semiconductor device dimensions shrink, new diffusion barriers will be required. Amorphous refractory ternaries have been identified as promising barrier candidates; because sputtering may not be suitable, we have developed chemical vapor deposition processes for these materials. Acceptable deposition rates are found for each of these processes at 350 C, with all depositions performed between 300 and 450 C. The first process produces a range of Ti-Si-N compositions from Ti organometallic, SiH4, and NH3. Resistivity of the Ti-Si-N films changes with Si content from>1[Omega]-cm at 25 at.% Si down to that of TiN (200[mu][Omega]-cm). Step coverage obtained is better than 80% on 0.5 [mu]m features with aspect ratios of>1.6. The second CVD process produces a range of W-Si-N film compositions from WF6, Si2H6, and NH3. Resistivities vary with composition from 350 to 20,000 [mu][Omega]-cm. Step coverage obtained is 100% on reentrant 0.25 [mu]m features with aspect ratios of 4.0. The third process employs WF6(reduced by SiH4), B2H6, and NH3 to produce W-B-N films with a range of compositions. Resistivities range from 200 to 20,000 [mu][Omega]-cm. Step coverage obtained is H"0% on 1.5 [mu]m features with aspect ratios of 5.5.
Chemical Vapor Deposition of Ti-Si-N Diffusion Barriers and Their Characterization
Author: Kathryn Elizabeth Helen VersprillePublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Chemical Vapor Deposition of Refractory Ternary Nitrides for Advanced Diffusion Barriers
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.
Chemical Vapor Deposition Studies of Titanium-silicon-nitride Thin Films for Use as Diffusion Barriers
Author: Edward Thomas Norton (Jr.)Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
Handbook of Chemical Vapor Deposition
Author: Hugh O. PiersonPublisher: William Andrew
ISBN: 1437744885
Category : Technology & Engineering
Languages : en
Pages : 459
Book Description
Handbook of Chemical Vapor Deposition: Principles, Technology and Applications provides information pertinent to the fundamental aspects of chemical vapor deposition. This book discusses the applications of chemical vapor deposition, which is a relatively flexible technology that can accommodate many variations. Organized into 12 chapters, this book begins with an overview of the theoretical examination of the chemical vapor deposition process. This text then describes the major chemical reactions and reviews the chemical vapor deposition systems and equipment used in research and production. Other chapters consider the materials deposited by chemical vapor deposition. This book discusses as well the potential applications of chemical vapor deposition in semiconductors and electronics. The final chapter deals with ion implantation as a major process in the fabrication of semiconductors. This book is a valuable resource for scientists, engineers, and students. Production and marketing managers and suppliers of equipment, materials, and services will also find this book useful.