Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Chemical Vapor Deposition of Ternary Refractory Nitrides for Diffusion Barrier Applications
Author: Chemical Vapor Deposition of Refractory Ternary Nitrides for Advanced Diffusion Barriers
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 14
Book Description
Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.
Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. The authors demonstrate chemical vapor deposition (CVD) of Ti-Si-N-containing films in a commercially available single-wafer CVD system using two different Ti precursors, TiCl4 and tetrakis(diethylamino)titanium (TDEAT). In particular, the TDEAT-based films can be grown conformally with low impurity content, and are promising candidates for advanced diffusion barrier applications.
Handbook of Chemical Vapor Deposition
Author: Hugh O. PiersonPublisher: William Andrew
ISBN: 0815517432
Category : Technology & Engineering
Languages : en
Pages : 507
Book Description
Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.
Thermal Metalorganic Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here the authors present results on purely thermal metalorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450 C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0--20 at.%. Typical impurity contents are 5--10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1,000[micro][Omega]-cm for films with less than 5 at.% Si. These films are promising candidates for advanced diffusion barriers.
Proceedings
Author: Publisher:
ISBN:
Category : Hybrid integrated circuits
Languages : en
Pages : 658
Book Description
Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12
Author: Robert HavemannPublisher: Mrs Conference Proceedings
ISBN:
Category : Computers
Languages : en
Pages : 640
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Chemical Vapor Deposition of Refractory Metals and Ceramics: Volume 168
Author: Theodore M. BesmannPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
Papers originally presented at the symposium on [title] held in Boston, November/December 1989. The contributions are organized into six sections, covering fundamentals/modeling, diagnostics, process- microstructure relationships, microstructure-mechanical property relationships, novel/large-scale technologies, and metal-organic chemical vapor deposition. Acidic paper. Annotation copyrighted by Book News, Inc., Portland, OR
Nuclear Science Abstracts
Author: Chemical Vapor Deposition Studies of Titanium-silicon-nitride Thin Films for Use as Diffusion Barriers
Author: Edward Thomas Norton (Jr.)Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description