Author: James R. Dekker
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
Book Description
Chemical Vapor Deposition of Epitaxial Silicon-germanium-carbon Alloys Using Cyclopropane as a Carbon Source Gas
Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition
Author: Theodore M. Besmann
Publisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771559
Category : Science
Languages : en
Pages : 922
Book Description
Chemical Vapor Deposition of Silicon-germanium-carbon Films
Author: Pankaj Neelkanth Joshi
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 294
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 294
Book Description
Chemical Vapor Deposition of Epitaxial Silicon
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.
Proceedings of the Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis
Author: Mark Donald Allendorf
Publisher: The Electrochemical Society
ISBN: 9781566772174
Category : Science
Languages : en
Pages : 506
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566772174
Category : Science
Languages : en
Pages : 506
Book Description
Chemical Vapor Deposition
Author: Electrochemical Society. High Temperature Materials Division
Publisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686
Book Description
Proceedings of the ... European Conference on Chemical Vapor Deposition
Fundamental Gas-phase and Surface Chemistry of Vapor-phase Deposition II and Process Control, Diagnostics and Modeling in Semiconductor Manufacturing IV
Author: Electrochemical Society. High Temperature Materials Division
Publisher: The Electrochemical Society
ISBN: 9781566773195
Category : Science
Languages : en
Pages : 526
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773195
Category : Science
Languages : en
Pages : 526
Book Description
Silicon and Germanium Thin Film Chemical Vapor Deposition, Modeling and Control
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
From 1995-2000, researchers at The University of Texas at Austin and the University of Wisconsin, Madison investigated and demonstrated new, intelligent manufacturing processes for growing epitaxial silicon alloy thin films that employ input from in situ optical process sensors to maintain precise control of film composition and thickness. The research team accomplished what was set forth in the original proposal. Significant progress was made in understanding the fundamental chemistry and physics of thin alloy films that affects the sensor operation and growth models, in developing and implementing state estimation and model predictive control techniques, in advancing optical sensors that can provide a complete description of the film properties, and in the design and demonstration of strained SiGe/Si and SiGeC/Si heterostructures with significant device performance enhancements over Si-based devices.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
From 1995-2000, researchers at The University of Texas at Austin and the University of Wisconsin, Madison investigated and demonstrated new, intelligent manufacturing processes for growing epitaxial silicon alloy thin films that employ input from in situ optical process sensors to maintain precise control of film composition and thickness. The research team accomplished what was set forth in the original proposal. Significant progress was made in understanding the fundamental chemistry and physics of thin alloy films that affects the sensor operation and growth models, in developing and implementing state estimation and model predictive control techniques, in advancing optical sensors that can provide a complete description of the film properties, and in the design and demonstration of strained SiGe/Si and SiGeC/Si heterostructures with significant device performance enhancements over Si-based devices.