Author: Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 784
Book Description
American Doctoral Dissertations
Author: Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 784
Book Description
Ceramic Abstracts
Author: Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Book Description
Physics Briefs
Author: International aerospace abstracts
Author: Japanese Technical Abstracts
Author: Japanese Technical Periodical Index
Author: Silicon Carbide
Author: Wolfgang J. ChoykePublisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911
Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
The Materials Science of Thin Films
Author: Milton OhringPublisher: Academic Press
ISBN: 9780125249904
Category : Science
Languages : en
Pages : 744
Book Description
Prepared as a textbook complete with problems after each chapter, specifically intended for classroom use in universities.
Silicon Device Processing
Author: Charles P. MarsdenPublisher:
ISBN:
Category : Electronics
Languages : en
Pages : 472
Book Description
The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).