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Author: Phillip Eugene Russell Publisher: Nabu Press ISBN: 9781289778880 Category : Languages : en Pages : 190
Book Description
This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.
Author: Phillip Eugene Russell Publisher: Nabu Press ISBN: 9781289778880 Category : Languages : en Pages : 190
Book Description
This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.
Author: Hans J. Möller Publisher: Springer Science & Business Media ISBN: 3642934137 Category : Technology & Engineering Languages : en Pages : 399
Book Description
This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.
Author: Yue Kuo Publisher: Springer Science & Business Media ISBN: 9781402075063 Category : Thin film transistors Languages : en Pages : 528
Book Description
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Author: Pavel Lejcek Publisher: Springer Science & Business Media ISBN: 3642125050 Category : Technology & Engineering Languages : en Pages : 249
Book Description
Grain boundaries are important structural components of polycrystalline materials used in the vast majority of technical applications. Because grain boundaries form a continuous network throughout such materials, their properties may limit their practical use. One of the serious phenomena which evoke these limitations is the grain boundary segregation of impurities. It results in the loss of grain boundary cohesion and consequently, in brittle fracture of the materials. The current book deals with fundamentals of grain boundary segregation in metallic materials and its relationship to the grain boundary structure, classification and other materials properties.
Author: Mazharul Huq Chowdhury Publisher: ISBN: Category : Languages : en Pages : 114
Book Description
Polycrystalline materials are widely used in large area electronic devices such as flat panel x-ray image detectors, and solar cells due to their suitability to deposit over large area at low cost. The performance of polycrystalline-based flat panel detectors are showing encouraging results (good sensitivity, good resolution and acceptable dark current) and give possibility to replace existing x-ray film/screen cassette. Therefore large area polycrystalline based flat panel detectors have opened new clinical possibilities and the polycrystalline solar cells give the opportunity of manufacturing low cost photovoltaic cells. Consequently, active research has been carried out to find out suitable polycrystalline materials (e.g. HgI2, CdTe, CdZnTe, PbI2, PbO etc) for various large area applications. However a polycrystalline material is composed of micro crystallites joined together by grain boundaries (complex structure, consisting of a few atomic layers of disordered atoms) which posses trap centers for charge carriers. Therefore, grain boundaries can trap a large amount of charges during detector operation. A potential barrier for drifting carriers may exist at the grain boundary, which controls the carrier mobility. Moreover, the performance of these polycrystalline detectors are affected due to the polarization phenomena (any change in the performance of the detector after the detector biasing) under applied bias. Therefore, in this research work, an analytical model is developed to study the electrical properties (electric field and potential distributions, potential barrier height, and polarization phenomenon) of polycrystalline materials at different doping levels for detector and solar cell applications by considering an arbitrary amount of grain boundary charge and a finite width of grain boundary region. The general grain boundary model is also applicable to highly doped polycrystalline materials. The electric field and potential distributions are obtained by solving the Poisson's equation in both depleted grains and grain boundary regions. The electric field and potential distributions across the detector are analyzed under various doping, trapping and applied biases. The electric field collapses, i.e., a nearly zero average electric field region exists in some part of the biased detector at high trapped charge densities at the grain boundaries. The model explains the conditions of existence of a zero average field region, i.e., it explains the polarization mechanisms in polycrystalline materials. The potential barrier at the grain boundary exists if the electric field changes its sign at the opposite side of the grain boundary. The potential barrier does not exist in all grain boundaries in the low doped polycrystalline detector and it never exists in intrinsic polycrystalline detectors under applied bias condition provided there is no charge trapping in the grain.
Author: Phillip Eugene Russell
Author: Phillip Eugene Russell
Author: Hans J. Möller
Author: Yue Kuo
Author: Pavel Lejcek
Author: Mazharul Huq Chowdhury
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