Charge-based Modeling of Thin-film Silicon-on-insulator MOS Field-effect Transistors PDF Download

Author: Hyung-Kyu Lim
Publisher:
ISBN:
Category : Semiconductor films
Languages : en
Pages : 308

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Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531

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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Author: Dong-Won Kim
Publisher: CRC Press
ISBN: 1000936082
Category : Technology & Engineering
Languages : en
Pages : 238

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Book Description
This book provides real stories about the South Korean semiconductor community. It explores the lives and careers of six influential semiconductor engineers who all studied at Korea Advanced Institute of Science and Technology (KAIST) under the mentorship of Dr. Kim Choong-Ki, the most influential semiconductor professor in South Korea during the last quarter of the twentieth century. Kim’s students became known as “Kim’s Mafia” because of the important positions they went on to hold in industry, government, and academia. This book will be of interest to semiconductor engineers and electronics engineers, historians of science and technology, and scholars and students of East Asian studies. “They were called ‘Kim’s Mafia.’ Kim Choong-Ki himself wouldn’t have put it that way. But it was true what semiconductor engineers in South Korea whispered about his former students: They were everywhere. ... Kim was the first professor in South Korea to systematically teach semiconductor engineering. From 1975, when the nation had barely begun producing its first transistors, to 2008, when he retired from teaching, Kim trained more than 100 students, effectively creating the first two generations of South Korean semiconductor experts.” (Source: IEEE Spectrum, October, 2022.)

Author: Richard S. C. Cobbold
Publisher: New York : Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 568

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Author: Christopher James Nassar
Publisher:
ISBN:
Category : Thin film transistors
Languages : en
Pages : 292

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Book Description
"The semiconductor industry, now entering its seventh decade, continues to innovate and evolve at a breakneck pace. E.O. Wilson, the famous Harvard biologist who is an expert on ants, estimates that there are 1017 ants on earth. The semiconductor industry is now shipping 100 transistors per ant every year. In addition, the pace of growth means we are building more electronics in a year than existed on January 1st of that year! A major driver for this growth in recent years is the portable consumer electronics market which includes cell phones, personal digital assistants, and tablets. The focus of this dissertation is centered on a new thin-film silicon technology on glass introduced by Corning Inc., and targeted to meet the needs of the portable product display market. The work presented in this dissertation revolves around a new technology developed by Corning Inc. known as Silicon on Glass of SiOG which permits the transfer of a thin single-crystal silicon film to a glass substrate. This technology coupled with a low-temperature CMOS process has the potential to create devices with performance characteristics rivaling those developed using conventional bulk CMOS processes. These higher performing devices permit an increased level of circuit integration directly on the glass substrate and have the potential to enable new display technologies such as OLED (Organic Light Emitting Diode). The SiOG CMOS devices are distinctly different from traditional thin-film, silicon-on-insulator, and bulk CMOS devices in that they rely on both surface and bulk conduction. Furthermore, their current-voltage characteristics are heavily influenced by fringing electric fields in the glass substrate. This dissertation presents an overview of display technology as well as a review of computer-aided design tools for integrated circuit development with a focus on compact modeling. In addition, some early work on developing advanced OLED display driver circuits using SiOG technology is presented. The bulk of this dissertation is focused on the development of compact models which properly describe the electrical characteristics of SiOG CMOS devices. For all but the most trivial cases, the set of coupled nonlinear partial differential equations that describe semiconductor device behavior has not been solved analytically. Even when the semiconductor equations that represent current flow, charge distribution, and potential distribution are decoupled and device-specific simplifications are applied, analytic solutions remain elusive. Two different methods for developing compact models for the SiOG CMOS devices are presented with distinct methods for developing approximate solutions. In addition, a model for the fringing electric field is developed using conformal mapping techniques, and its effect on drain current is explored. Finally, a new technique for solving the nonlinear semiconductor equations is explored. The application of a new mathematical technique known as the Homotopy Analysis Method (HAM) is presented as it relates to the general Poisson's equation for semiconductor devices."--Abstract.

Author: Dhanasekaran Vikraman
Publisher: BoD – Books on Demand
ISBN: 1789234166
Category : Technology & Engineering
Languages : en
Pages : 168

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Book Description
In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.

Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328

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Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Author: Narain Arora
Publisher: World Scientific
ISBN: 9812707581
Category : Technology & Engineering
Languages : en
Pages : 633

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Book Description
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Author: Paul Richman
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 280

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Author: Zoubeida Hafdi
Publisher: Springer Nature
ISBN: 3031247930
Category : Technology & Engineering
Languages : en
Pages : 141

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Book Description
This book explains the basic elements that readers need to know about amorphous silicon material and a-Si:H TFTs. It includes the main principles of the transistors operation, modeling and applications. Fundamentals about transport mechanisms in a-Si:H TFTs and the associated electronic properties are introduced and extended to design examples and strategies to build reliable, large-area, performance optimized circuits. The book also reviews the effect of the amorphous silicon nature and how it impacts the transistors properties and their relevant applications. Fundamentals are made as simple as possible to be easily grasped as they cover everything expected to be important for an easy understanding of the introduced concepts. The author’s approach is geared toward undergraduate and graduate students, but the content is also appropriate for circuit simulator developers, integrated circuit designers and manufacturers, as well as everyone engaged in work on large area integrated circuit technologies and photovoltaics.