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Characterization of the Burst Strength of Polycrystalline Diamond Thin Films

Characterization of the Burst Strength of Polycrystalline Diamond Thin Films PDF Author: Lyndon Edward David Flowers
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 370

Book Description


Characterization of the Burst Strength of Polycrystalline Diamond Thin Films

Characterization of the Burst Strength of Polycrystalline Diamond Thin Films PDF Author: Lyndon Edward David Flowers
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 370

Book Description


Ultimate Tensile Strength of Polycrystalline Diamond Thin Film

Ultimate Tensile Strength of Polycrystalline Diamond Thin Film PDF Author: Xuan Cao
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 106

Book Description


Characterization of the Electrical Properties of Polycrystalline Diamond Films

Characterization of the Electrical Properties of Polycrystalline Diamond Films PDF Author: Shulai Zhao
Publisher:
ISBN:
Category :
Languages : en
Pages : 394

Book Description


Study of Polycrystalline Diamond Thin Films Grown in a Custom Built ECR PE-CVD System

Study of Polycrystalline Diamond Thin Films Grown in a Custom Built ECR PE-CVD System PDF Author: Vidhya Sagar Jayaseelan
Publisher:
ISBN:
Category :
Languages : en
Pages : 212

Book Description
The increasing importance of high temperature electronics has necessitated a search for new materials. Silicon provides low reliability or fails to function altogether at elevated (>500F /260(C) temperatures. Diamond, being a wide-band-gap semiconductor, is a very promising candidate for these applications as well as others that function in adverse conditions. However, the present day diamond film technology, with respect to quality and consistency of properties of the films, has not seen the advancement required for its commercial application. This research is an effort to investigate the growth of diamond thin films to enable their application for advanced electronic devices. The first objective of the research was to construct a state of the art Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition (ECR-MPCVD) system for processing diamond and diamond like materials. Such a facility is the most advanced and powerful tool for CVD of poly-crystalline diamond and cubic Boron Nitride. Important factors like ease of operation and maintenance, stability and reproducibility of process conditions, reliability, safety, cost etc were considered while constructing the machine. The system was subjected to a series of tests to ensure that these factors were adequately satisfied. The second objective of this project was to grow polycrystalline diamond films under various conditions of chamber pressure, substrate temperature, hydrogen flow rate, composition and substrate pretreatment. The properties of the films grown under these conditions were evaluated by various modern characterization techniques such as optical microscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction. Optical microscopy is an inexpensive, quick and effective method for initial evaluation of the uniformity and general morphology of the films obtained. Scanning electron microscopy gives information about the grain size, thickness, growth rate, uniformity, faceting, roughness, and continuous nature of the film. Raman spectroscopy is probably the most important characterization method for diamond films for electronic applications. It helps to identify the presence of diamond and the nature of the film. Raman spectrum is used to evaluate the quality of the diamond grains in the film, defect concentration and crystallinity. It also gives information about the presence of the non-diamond graphite phase and hence indirectly the intrinsic conductivity. XRD is also a positive identification tool. It was also used to derive information about the grain orientation with respect to the silicon substrate. The properties of the films obtained were correlated with the growth parameters and conclusions were drawn about the effect of these parameters on the film properties. This also helped in the characterization of the MPCVD reactor and in determining an effective range of parameters for future studies on the selective growth, long term growth, or growth of films with oxygen addition to the precursor.

Thin Film Diamond

Thin Film Diamond PDF Author: A.H. Lettington
Publisher: Springer Science & Business Media
ISBN: 9401107254
Category : Science
Languages : en
Pages : 160

Book Description
This work, written by leading international authorities, deals with nucleation growth and processing, characterization and electrical, thermal, optical and mechanical properties of thin film diamond. The final chapters are devoted to the broad range of applications of this material.

Synthesis, Doping and Characterization of Chemical Vapor Deposited Polycrystalline Diamond and Nanostructured Carbon Thin Films for Electronic Applications

Synthesis, Doping and Characterization of Chemical Vapor Deposited Polycrystalline Diamond and Nanostructured Carbon Thin Films for Electronic Applications PDF Author: Sanju Gupta
Publisher:
ISBN:
Category :
Languages : en
Pages : 472

Book Description


Synthesis and Characterization of Diamond Thin Films by Microwave Plasma-enhanced Chemical Vapor Deposition (MPECVD)

Synthesis and Characterization of Diamond Thin Films by Microwave Plasma-enhanced Chemical Vapor Deposition (MPECVD) PDF Author: Shih-Feng Chou
Publisher:
ISBN:
Category :
Languages : en
Pages : 174

Book Description
Diamond thin films are deposited on silicon wafers by MPECVD process with the presence of methane, argon, and hydrogen gases. The reaction chamber is designed with an internal microwave reaction cavity and a high-pressure pocket for improving deposition conditions. Scanning electron microscopy reveals tetrahedral and cauliflower-shaped crystals for polycrystalline diamond and nanocrystalline diamond films, respectively. Spectroscopy ellipsometer studies indicate that diamond-like carbon (DLC) films are deposited with a thickness of 700 nm. Fourier transform infrared spectroscopy shows C-H stretching in the range from 2800 cm -1 to 3000 cm -1 . Nanoindentation is performed on DLC films with an average hardness of 10.98 GPa and an average elastic modulus of 90.32 GPa. The effects of chamber pressure, microwave forward power, and gas mixture on the plasma chemistry are discussed. Substrate temperature has a significant influence on film growth rate, and substrate pretreatment can enhance the quality of diamond films.

The Electrical Characteristics of Polycrystalline Diamond Films

The Electrical Characteristics of Polycrystalline Diamond Films PDF Author: Chung-Chih Hung
Publisher:
ISBN:
Category :
Languages : en
Pages : 436

Book Description


Characterization of Diamond Thin Films

Characterization of Diamond Thin Films PDF Author: Mary Longo
Publisher:
ISBN:
Category :
Languages : en
Pages : 186

Book Description


Polycrystalline Diamond Thin Films for Advanced Applications

Polycrystalline Diamond Thin Films for Advanced Applications PDF Author: Irena Kratochvilova
Publisher:
ISBN:
Category : Science
Languages : en
Pages :

Book Description
The technological achievements in diamond thin film synthesis over the past decade subsequently led to the utilization of outstanding diamond properties and development of a wide range of applications in various fields of engineering. However, since most chemical vapour deposition (CVD) diamond films are polycrystalline, their characteristics strongly depend on their microstructure. As the number of possible applications for polycrystalline CVD diamond increases, there is constant development and enhancement of the film properties. Polycrystalline diamond in the form of thin films delivers further advantages over thicker polycrystalline layer, e.g., smoother surface, less deposition time and less light absorption. Furthermore, besides the relevant diamond properties, the suitability for applications also depends on various material parameters such as substrate nature, substrate dimensions, possibility of non-planar geometries, surface morphology, electrical conductivity, capability of device fabrication, electrochemical properties and cost.