Author: Linda Mason Garverick
Publisher:
ISBN:
Category :
Languages : en
Pages : 374
Book Description
Characterization of Silicon Epitaxy Deposited by Plasma-enhanced Chemical Vapor Deposition at Low Temperatures and Very Low Pressures
Author: Linda Mason Garverick
Publisher:
ISBN:
Category :
Languages : en
Pages : 374
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 374
Book Description
Characterization of Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 29
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 29
Book Description
Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 22
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 22
Book Description
Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition
Author: T. J. Donahue
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 17
Book Description
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 17
Book Description
Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD
Author: R. Reif
Publisher:
ISBN:
Category : Autodoping
Languages : en
Pages : 3
Book Description
This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650-800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
Publisher:
ISBN:
Category : Autodoping
Languages : en
Pages : 3
Book Description
This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650-800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
Low-temperature Silicon Sputter-deposition Epitaxy for 3-D Integrated Circuits
Scientific and Technical Aerospace Reports
Research in Materials
Author: Massachusetts Institute of Technology
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 382
Book Description
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 382
Book Description
Low Temperature Epitaxial Deposition of Silicon by Plasma Enhanced CVD (Chemical Vapor Deposition).
Author: L. R. Reif
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
Book Description
A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author).
Fundamentals of Semiconductor Processing Technology
Author: Badih El-Kareh
Publisher: Springer Science & Business Media
ISBN: 1461522099
Category : Technology & Engineering
Languages : en
Pages : 605
Book Description
The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Publisher: Springer Science & Business Media
ISBN: 1461522099
Category : Technology & Engineering
Languages : en
Pages : 605
Book Description
The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.