Characterization of P- and N-type Zinc Oxide Films Prepared by RF Sputtering PDF Download

Author: 曾競範
Publisher:
ISBN:
Category :
Languages : en
Pages : 73

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Author: 李榕峻
Publisher:
ISBN:
Category :
Languages : en
Pages : 158

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Author: Kamlendra Awasthi
Publisher: Elsevier
ISBN: 0128189010
Category : Technology & Engineering
Languages : en
Pages : 781

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Nanostructured Zinc Oxide covers the various routes for the synthesis of different types of nanostructured zinc oxide including; 1D (nanorods, nanowires etc.), 2D and 3D (nanosheets, nanoparticles, nanospheres etc.). This comprehensive overview provides readers with a clear understanding of the various parameters controlling morphologies. The book also reviews key properties of ZnO including optical, electronic, thermal, piezoelectric and surface properties and techniques in order to tailor key properties. There is a large emphasis in the book on ZnO nanostructures and their role in optoelectronics. ZnO is very interesting and widely investigated material for a number of applications. This book presents up-to-date information about the ZnO nanostructures-based applications such as gas sensing, pH sensing, photocatalysis, antibacterial activity, drug delivery, and electrodes for optoelectronics. - Reviews methods to synthesize, tailor, and characterize 1D, 2D, and 3D zinc oxide nanostructured materials - Discusses key properties of zinc oxide nanostructured materials including optical, electronic, thermal, piezoelectric, and surface properties - Addresses most relevant zinc oxide applications in optoelectronics such as light-emitting diodes, solar cells, and sensors

Author: Chennupati Jagadish
Publisher: Elsevier
ISBN: 0080464033
Category : Science
Languages : en
Pages : 600

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Book Description
With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering:- Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film

Author: Michelle Anne Myers
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Applications of zinc oxide (ZnO) for optoelectronic devices, including light emitting diodes, semiconductor lasers, and solar cells have not yet been realized due to the lack of high-quality p-type ZnO. In the research presented herein, pulsed laser deposition is employed to grow Ag-doped ZnO thin films, which are characterized in an attempt to understand the ability of Ag to act as a p-type dopant. By correlating the effects of the substrate temperature, oxygen pressure, and laser energy on the electrical and microstructural properties of Ag-doped ZnO films grown on c-cut sapphire substrates, p-type conductivity is achieved under elevated substrate temperatures. Characteristic stacking fault features have been continuously observed by transmission electron microscopy in all of the p-type films. Photoluminescence studies on n-type and p-type Ag-doped ZnO thin films demonstrate the role of stacking faults in determining the conductivity of the films. Exciton emission attributed to basal plane stacking faults suggests that the acceptor impurities are localized nearby the stacking faults in the n-type films. The photoluminescence investigation provides a correlation between microstructural characteristics and electrical properties of Ag- doped ZnO thin films; a link that enables further understanding of the doping nature of Ag impurities in ZnO. Under optimized deposition conditions, various substrates are investigated as potential candidates for ZnO thin film growth, including r -cut sapphire, quartz, and amorphous glass. Electrical results indicated that despite narrow conditions for obtaining p-type conductivity at a given substrate temperature, flexibility in substrate choice enables improved electrical properties. In parallel, N+-ion implantation at elevated temperatures is explored as an alternative approach to achieve p-type ZnO. The ion implantation fluence and temperature have been optimized to achieve p-type conductivity. Transmission electron microscopy reveals that characteristic stacking fault features are present throughout the p-type films, however in n-type N-doped films high-density defect clusters are observed. These results suggest that the temperature under which ion implantation is performed plays a critical role in determining the amount of dynamic defect re- combination that can take place, as well as defect cluster formation processes. Ion implantation at elevated temperatures is shown to be an effective method to introduce increased concentrations of p-type N dopants while reducing the amount of stable post-implantation disorder. Finally, the fabrication and properties of p-type Ag-doped ZnO/n-type ZnO and p-type N-doped ZnO/n-type ZnO thin film junctions were reported. For the N-doped sample, a rectifying behavior was observed in the I-V curve, consistent with N-doped ZnO being p-type and forming a p-n junction. The turn-on voltage of the device was -2.3 V under forward bias. The Ag-doped samples did not result in rectifying behavior as a result of conversion of the p-type layer to n-type behavior under the n- type layer deposition conditions. The systematic studies in this dissertation provide possible routes to grow p-type Ag-doped ZnO films and in-situ thermal activation of N-implanted dopant ions, to overcome the growth temperature limits, and to push one step closer to the future integration of ZnO-based devices. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/149354

Author: Zhe Chuan Feng
Publisher: Taylor & Francis
ISBN: 143985582X
Category : Science
Languages : en
Pages : 1008

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Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a

Author: Chennupati Jagadish
Publisher: Elsevier Science
ISBN: 9781483299679
Category : Science
Languages : en
Pages : 600

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Book Description
With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering: - Recent advances in bulk, thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation, Ohmic and Schottky contacts, wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film

Author: Paolo Mele
Publisher:
ISBN: 9781536160864
Category : Zinc oxide thin films
Languages : en
Pages : 0

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Book Description
Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.

Author: Kenichi Takahata
Publisher: BoD – Books on Demand
ISBN: 9533070277
Category : Technology & Engineering
Languages : en
Pages : 528

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Book Description
This book discusses key aspects of MEMS technology areas, organized in twenty-seven chapters that present the latest research developments in micro electronic and mechanical systems. The book addresses a wide range of fundamental and practical issues related to MEMS, advanced metal-oxide-semiconductor (MOS) and complementary MOS (CMOS) devices, SoC technology, integrated circuit testing and verification, and other important topics in the field. ?Several chapters cover state-of-the-art microfabrication techniques and materials as enabling technologies for the microsystems. Reliability issues concerning both electronic and mechanical aspects of these devices and systems are also addressed in various chapters.

Author: Madhavi Oleti Kalki Rajan
Publisher:
ISBN:
Category :
Languages : en
Pages :

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ABSTRACT: The carrier concentration and the mobility obtained for these films were 4.0x10p1.