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Author: Inanc Meric Publisher: ISBN: Category : Languages : en Pages :
Book Description
Transistors RF performance and bias dependence of high frequency behavior is explored. Novel fabrications methods are developed to improve FET performance. A technique is developed to grow metal-oxides on graphene surface for efficient gate coupling. An alternative approach to making high quality devices is realized by incorporating hexagonal-boron nitride as a gate dielectric. These transistors exhibit the potential of graphene electronics for high-performance analog electronic applications.
Author: Inanc Meric Publisher: ISBN: Category : Languages : en Pages :
Book Description
Transistors RF performance and bias dependence of high frequency behavior is explored. Novel fabrications methods are developed to improve FET performance. A technique is developed to grow metal-oxides on graphene surface for efficient gate coupling. An alternative approach to making high quality devices is realized by incorporating hexagonal-boron nitride as a gate dielectric. These transistors exhibit the potential of graphene electronics for high-performance analog electronic applications.
Author: Omar Azzaroni Publisher: John Wiley & Sons ISBN: 3527349901 Category : Technology & Engineering Languages : en Pages : 453
Book Description
Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.
Author: Omar Azzaroni Publisher: John Wiley & Sons ISBN: 3527843388 Category : Technology & Engineering Languages : en Pages : 453
Book Description
Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.
Author: Mohit Moitra Publisher: ISBN: Category : Field-effect transistors Languages : en Pages : 0
Book Description
"Radio Frequency performance of field-effect transistors has been explored in depth, experimented and industrially in use since a long time. Whenever one thinks of transistors which could take us to the regime of more than 1 THz in frequency it would always be the High Electron Mobility Transistors (HEMTS) as the perfect solution to that. The Graphene transistors have been very much in research from 2010 and promise equal results due to their huge potential in mobility. In the Semiconductor Manufacturing And Fabrication Laboratory at the Rochester Institute Of Technology our research group has been designing, fabricating and characterizing the graphene transistors of top-gated and back- gated varieties of which the former has been more explored and characterized because of its potential in high frequency performance. In this thesis characterization of both the top-gated and the back-gated varieties will be discussed in intricate detail with different permutation and combinations in experiments in order to depict the efficiency of these transistors in terms of their frequency characteristics and the possible ways to optimize the mobility and transconductance, thereby changing the hysteresis behaviours of the top-gated transistors. The maximum oscillation frequency has been explored for the top-gated variant where it can be estimated how they are in performance and exhibit unique nature compared to that of the PMOS and the NMOS devices along with this distinctive hysteresis behaviours by application of a polymer on GFETs has been investigated."--Abstract.
Author: Sk. Fahad Chowdhury Publisher: ISBN: Category : Languages : en Pages : 178
Book Description
The field of two-dimensional layered materials has witnessed extensive research activities during the past decade, which commenced with the seminal work of isolating graphene from bulk graphite. In addition to providing a rich playground for scientific experiments, graphene has soon become a material of technological interest for many of its fascinating electrical, thermal, mechanical and optical properties. The controllability of carrier density with electric field in graphene, along with very high carrier mobility and saturation velocity, has motivated the use of graphene channel in field-effect devices. Also, the two-dimensional layered materials family has grown very rapidly with the application of the graphene exfoliation technique and many of these elemental and compound materials are considered useful for transistor applications. In this work, various aspects of the use of two-dimensional layered materials for transistor applications were analyzed. Starting with material synthesis, field-effect transistors (FETs) were designed, fabricated and tested for their DC and high frequency performances. Through the detailed electrical and spectroscopic investigations of several processing techniques for enhanced FET performance, numerous insights were obtained into the FET operation and performance bottlenecks. The reduction of charged impurity scattering in graphene FET by Hexamethyldisilazane interaction improved field-effect mobility and reduced residual carrier concentration. This technique was also shown to be promising for other two-dimensional materials based FET. A useful technique for reducing the thickness of black phosphorus flake with oxygen plasma etching was developed. Both back-gated and top-gated FETs were implemented with good performances. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy revealed vital structural information about layered black phosphorus. Lastly, these exotic materials based FETs were characterized for their high frequency performance, resulting in gigahertz range transit frequency and operated in a variety of important circuit configurations such as frequency multiplier, amplifier, mixer and AM demodulator.
Author: Satyabrata Jit Publisher: Elsevier ISBN: 0128176792 Category : Technology & Engineering Languages : en Pages : 285
Book Description
2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area. - Explores synthesis techniques of newly evolved 2D materials and their heterostructures with controlled properties - Offers detailed analysis of the fundamental properties (via various experimental process and simulations techniques) of 2D heterostructures materials - Discusses the applications of 2D heterostructured materials in various high-performance devices
Author: Abdul Rashid bin M. Yusoff Publisher: John Wiley & Sons ISBN: 3527677801 Category : Technology & Engineering Languages : en Pages : 352
Book Description
This first book on emerging applications for this innovative material gives an up-to-date account of the many opportunities graphene offers high-end optoelectronics. The text focuses on potential as well as already realized applications, discussing metallic and passive components, such as transparent conductors and smart windows, as well as high-frequency devices, spintronics, photonics, and terahertz devices. Also included are sections on the fundamental properties, synthesis, and characterization of graphene. With its unique coverage, this book will be welcomed by materials scientists, solid-state chemists and solid-state physicists alike.
Author: Jongho Lee Publisher: ISBN: Category : Languages : en Pages : 392
Book Description
Despite the widespread interest in graphene electronics over the last decade, high-performance graphene field-effect transistors (GFETs) on flexible substrates have been rarely achieved, even though this atomic sheet is widely understood to have greater prospects for flexible electronic systems. In this work, we investigate the realization of high-performance graphene field effect transistors implemented on flexible plastic substrates. The optimum device structure for high-mobility and high-bendability is suggested with experimental comparison among diverse structures including top-gate GFETs (TG-GFETs), single/multi-finger embedded-gate GFETs with high-k dielectrics (EG-highk/GFETs), and embedded-gate GFETs with hexagonal boron nitride (h-BN) dielectrics. Flexible graphene transistors with high-k dielectric afforded intrinsic gain, maximum carrier mobility of 8,000 cm2/V·s, and importantly 32 GHz cut-off frequency. Mechanical studies reveal robust transistor performance under repeated bending down to 0.7 mm bending radius whose tensile strain corresponds to 8.6%. Passivation techniques, with robust mechanical and chemical protection in order to operate under harsh environments, for embedded-gate structures are also covered. The integration of functional coatings such as highly hydrophobic fluoropolymers combined with the self-passivation properties of the polyimide substrate provides water-resistant protection without compromising flexibility, which is an important advancement for the realization of future robust flexible systems based on graphene.
Author: Yaser M. Banadaki Publisher: CRC Press ISBN: 0429666594 Category : Science Languages : en Pages : 210
Book Description
Tremendous innovations in electronics and photonics over the past few decades have resulted in the downsizing of transistors in integrated circuits, which are now approaching atomic scales. This will soon result in the creation of a growing knowledge gap between the underlying technology and state-of-the-art electronic device modeling and simulations. This book bridges the gap by presenting cutting-edge research in the computational analysis and mathematical modeling of graphene nanostructures as well as the recent progress on graphene transistors for nanoscale circuits. It inspires and educates fellow circuit designers and students in the field of emerging low-power and high-performance circuit designs based on graphene. While most of the books focus on the synthesis, fabrication, and characterization of graphene, this book shines a light on graphene models and their circuit simulations and applications in photonics. It will serve as a textbook for graduate-level courses in nanoscale electronics and photonics design and appeal to anyone involved in electrical engineering, applied physics, materials science, or nanotechnology research.
Author: Inanc Meric
Author: Inanc Meric
Author: Seyoung Kim
Author: Omar Azzaroni
Author: Omar Azzaroni
Author: Mohit Moitra
Author: Sk. Fahad Chowdhury
Author: Satyabrata Jit
Author: Abdul Rashid bin M. Yusoff
Author: Jongho Lee
Author: Yaser M. Banadaki