Author: Xuefei TangPublisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 172
Book Description
Characterization of Gain-guided GaAs Quantum Well Semiconductor Lasers
Author: Xuefei TangPublisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 172
Book Description
Characterization of GaAs Quantum Well Edge Emitting Semiconductor Lasers
Author: Isabelle A. SmithPublisher:
ISBN:
Category : Diodes
Languages : en
Pages :
Book Description
This thesis will involve the details surrounding and describing the fabrication and characterization of GaAs laser diodes comprised of quantum well active regions. Within the scope of this thesis is a background to this realm of semiconductor technology, the processing tools that facilitate the fabrication, recipes for photolithography utilizing masks, and an explanation of results for the characterization methods and tests of device performance.
Quantum Well Lasers
Author: Peter S. ZoryPublisher: Academic Press
ISBN: 9780127818900
Category : Science
Languages : en
Pages : 530
Book Description
Provides information on all aspects of QW lasers, from the basic mechanism of optical gain, through the current technological state of the art, to the future technologies of quantum wires and quantum dots. Those working with lasers, especially semiconductor lasers, should find the book useful.
Semiconductor Lasers
Author: Govind P. AgrawalPublisher: Springer Science & Business Media
ISBN: 1461304814
Category : Technology & Engineering
Languages : en
Pages : 630
Book Description
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.
Broad Area Distributed Gain, Distributed Index Profile GaAlAs Semiconductor Laser Diodes
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 96
Book Description
High-power operation of a simple non-planar index-guided quantum well heterostructure periodic laser array structure is described, in which lateral lasing is prevented in a manner that still allows for uniform and continuous front facet light emission. The compositional disordering and compensation effects of MeV oxygen implantation have been applied to form stripe geometry graded barrier quantum well heterostructure lasers. A new broad area as well as narrow stripe window laser structure is described, in which a nonabsorbing window region is formed in the vicinity of the mirror facets by utilizing a selectively etched substrate and the advantageous properties of uniform MOCVD growth on nonplanar substrates. The growth and characterization of strained layer InGaAs-GaAs heterostructure lasers by MOCVD has been addressed. Ethyldimethylindium has been shown to be suitable as a precursor for the growth of indium compounds. The results of time-zero characterization of strained-layer InxGa(1-x)As-GaAs quantum well heterostructure laser diodes with 70-A-thick wells and indium mole fractions between 0.08 and 0.42 are reported. High power, in-phase locked operation of a wide aperture array is reported in which the lateral lasing and amplified spontaneous emission, characteristic of wide aperture arrays, are suppressed by a nonplanar active region. The antiguiding behavior of InGaAs-GaAs strained layer lasers has been exploited for form multiple-element oxide-defined-stripe phase-locked high power long wavelength (y> 0.95 um) strained layer quantum well heterostructure diode arrays operating in the in-phase fundamental array mode.
Quantum Confined Laser Devices
Author: Peter BloodPublisher: OUP Oxford
ISBN: 0191064653
Category : Technology & Engineering
Languages : en
Pages : 433
Book Description
The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent treatment of both quantum dot and quantum well structures taking full account of their dimensionality, which provides the reader with a complete account of contemporary quantum confined laser diodes. It includes plenty of illustrations from both model calculations and experimental observations. There are numerous exercises, many designed to give a feel for values of key parameters and experience obtaining quantitative results from equations. Some challenging concepts, previously the subject matter of research monographs, are treated here at this level for the first time.
Fabrication and Characterization of Lasers and Phase Modulators with Strained Quantum Well and Quantum Box Active Regions
Author: Hsiang-Chih SunPublisher:
ISBN:
Category : Lasers
Languages : en
Pages : 352
Book Description
Research study primary interest ; to optimize and implement low dimensional structures into the design of lasers and modulators, to minimize a number of existing problems associated with these devices, and to investigate the possibility of monolithic integration of a laser and a modulator on the same chip.
Design, simulation and analysis of laterally-longitudinally non-uniform edge-emitting GaAs-based diode lasers (Band 73)
Author: Jan-Philipp KoesterPublisher: Cuvillier Verlag
ISBN: 3736968825
Category :
Languages : en
Pages : 171
Book Description
Edge-emitting quantum-well diode lasers based on GaAs combine a high conversion efficiency, a wide range of emission wavelengths covering a span from 630 nm to 1180 nm, and the ability to achieve high output powers. The often used longitudinal-invariant Fabry-Pérot-type resonators are easy to design but often lead to functionality or performance limitations. In this work, the application of laterally-longitudinally non-uniform resonator configurations is explored as a way to reduce unwanted and performance-limiting effects. The investigations are carried out on existing and entirely newly developed laser designs using dedicated simulation tools. These include a sophisticated time-dependent laser simulator based on a traveling-wave model of the optical fields in the lateral-longitudinal plane and a Maxwell solver based on the eigenmode expansion method for the simulation of passive waveguides. Whenever possible, the simulation results are compared with experimental data. Based on this approach, three fundamentally different laser types are investigated: • Dual-wavelength lasers emitting two slightly detuned wavelengths around 784 nm out of a single aperture • Ridge-waveguide lasers with tapered waveguide and contact layouts that emit light of a wavelength of around 970 nm • Broad-area lasers with slightly tapered contact layouts emitting at 910 nm The results of this thesis underline the potential of lateral-longitudinal non-uniform laser designs to increase selected aspects of device performance, including beam quality, spectral stability, and output power.
Long-Wavelength Semiconductor Lasers
Author: Govind AgrawalPublisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 504
Book Description
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ILm. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8--0. 9 ILm, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage of low losses in silica fibers occurring around 1. 3 and 1. 55 ILm, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.
Author: Howard Yoon